| PART |
Description |
Maker |
| 30BF..SERIES 30BF80 30BF10 30BF20 30BF40 30BF60 30 |
DIODE 3 A, SILICON, RECTIFIER DIODE, DO-214AB, Rectifier Diode
SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
800V 3A Ultra-Fast Discrete Diode in a SMC package
400V 3A Ultra-Fast Discrete Diode in a SMC package
600V 3A Ultra-Fast Discrete Diode in a SMC package
100V 3A Ultra-Fast Discrete Diode in a SMC package
200V 3A Ultra-Fast Discrete Diode in a SMC package
|
International Rectifier, Corp.
IRF[International Rectifier]
VISHAY SEMICONDUCTORS
|
| IRG4PC30S IRG4PC30SPBF |
600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)
|
IRF[International Rectifier]
|
| IRG4BC40U |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A)
|
International Rectifier
|
| IRG4BC30K-S IRG4BC30KS IRG4BC30K-STRR |
600V UltraFast 8-25 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
|
IRF[International Rectifier]
|
| IRG4BC30U |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
| IRG4BC40W IRG4BC40W-S |
600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)
|
IRF[International Rectifier]
|
| IRG4BC30U-SPBF |
600V UltraFast 8-60 kHz Discrete IGBT in a D2-Pak package
|
International Rectifier
|
| IRG4BC30S |
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) 绝缘栅双极晶体管（VCES和\u003d 600V电压的Vce（on）典\u003d.4V，@和VGE \u003d 15V的，集成电路\u003d 18A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRG4IBC30W |
600V Warp 60-150 kHz Discrete IGBT in a TO-220 FullPak package
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| IRG4IBC20W |
600V Warp 60-150 kHz Discrete IGBT in a TO-220 FullPak package
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| IRG4PSC71U |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.67V, @Vge=15V, Ic=60A) 绝缘栅双极晶体管（VCES和\u003d 600V电压的Vce（on）典\u003d 1.67V，@和VGE \u003d 15V的，集成电路\u003d 60A条）
600V UltraFast 8-60 kHz Discrete IGBT in a TO-274AA package
|
International Rectifier, Corp.
|
