| PART |
Description |
Maker |
| 2N2785 |
Trans GP BJT NPN 300V 30A 3-Pin TO-63
|
New Jersey Semiconductor
|
| APT30D30B |
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE 300V 30A
|
Advanced Power Technology
|
| M4T32-BR12SH M41ST85WMX6 M41ST85WMH6TR M41ST85YMH6 |
TIMEKEEPER SNAPHAT Battery & Crystal
5.0 OR 3.0V, 512 bit 64 x 8 SERIAL RTC and NVRAM SUPERVISOR 5.0.0V124 × 8串行时钟和NVRAM督导
CLUSTER BAR, RJ-11 W/ (12) 4-W
RECTIFIER FAST-RECOVERY SINGLE 1A 300V 30A-ifsm 1.3V-vf 40ns 10uA-ir DO-41 5K/REEL-13
RECTIFIER FAST-RECOVERY SINGLE 1A 400V 30A-ifsm 1.3V-vf 40ns 10uA-ir DO-41 1K/BULK
DIODE SCHOTTKY 25V 10A D2-PAK
|
ST Microelectronics
STMicroelectronics N.V.
意法半导
|
| FQB14N30 FQI14N30 FQB14N30TM |
300V N-Channel MOSFET 14.4 A, 300 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262
300V N-Channel MOSFET 14.4 A, 300 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
300V N-Channel QFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
http://
|
| STP36NF06FP STP36NF06 |
N-CHANNEL 60V - 0.032 OHM - 30A TO-220/TO-220FP STRIPFET II POWER MOSFET
N-CHANNEL 60V - 0.032 - 30A TO-220/TO-220FP STripFET II POWER MOSFET N沟道60V 0.032 - 30ATO-220/TO-220FP STripFET二功率MOSFET
N-channel 60V - 0.032з - 30A - TO-220/TO-220FP STripFET⑩ II Power MOSFET
N-channel 60V - 0.032 - 30A - TO-220/TO-220FP STripFET II Power MOSFET
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| IRFP250N IRFP250 |
Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A)
N-Channel(Hexfet Transistors)
Power MOSFET(Vdss = 200 V Rds(on)=0.075ohm Id=30A)
Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A) 功率MOSFET（减振钢板基本\u003d 200第五的Rdson）\u003d 0.075ohm，身份证\u003d 30A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| STD30NE06L 6044 STD30NE06LT4 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 30A条（丁）|52AA
N - CHANNEL 60V - 0.025 ohm - 30A TO-252 STripFET POWER MOSFET
From old datasheet system
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| C2688BPL CSC2688 CSC2688BPL CSC2688G CSC2688O CSC2 |
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 200.000A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 160 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 60 - 120 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 80 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 100 - 200 hFE.
|
Continental Device India Limited
|
| IDB30E120 IDP30E120 |
Silicon Power Diodes - 30A EmCon in TO263
Silicon Power Diodes - 30A EmCon in TO220-2
|
Infineon
|
| 20FQ020 20FQ030 |
V(rwm): 20V; 30A dual schottky power rectifier
V(rwm): 30V; 30A dual schottky power rectifier
|
International Rectifier
|
| BUZ11 BUZ11R4941 |
30A, 50V, 0.040 Ohm, N-Channel Power MOSFET
30A, 50V, 0.040Ohm, N-Channel Power MOSFET
|
Fairchild Semiconductor Corporation
|
| ARF445 ARF444 |
RF OPERATION (1-15 MHz) POWER MOS IV 300W 300V 13.56MHz
N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET
|
ADPOW[Advanced Power Technology]
|
