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2SK1611 - V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification Silicon N-Channel Power F-MOS FET

2SK1611_238693.PDF Datasheet

 
Part No. 2SK1611
Description V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET

File Size 35.34K  /  2 Page  

Maker


Panasonic Semiconductor
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Part: 2SK1611
Maker: PANASONI..
Pack: TO-220
Stock: Reserved
Unit price for :
    50: $0.56
  100: $0.53
1000: $0.50

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 Full text search : V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification Silicon N-Channel Power F-MOS FET
 Product Description search : V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification Silicon N-Channel Power F-MOS FET


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