| PART |
Description |
Maker |
| CY62167G18-55BVXIES CY62167G30-45BVXIES CY62167GE3 |
16-Mbit (1 M words 16 bit / 2 M words 8 bit) Static RAM with Error-Correcting Code (ECC)
|
Cypress
|
| GM71C18163CL-6 GM71C18163C GM71C18163CL-5 GM71C181 |
1,048,576 words x 16 bit CMOS DRAM, 60ns
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM
|
HYNIX[Hynix Semiconductor]
|
| TC554001AFI TC554001AFI-10 TC554001AFI-10L TC55400 |
524,228 WORDS x 8 BIT STATIC RAM 524228字8位静态RAM
Circular Connector; No. of Contacts:55; Series:MS27467; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:17; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:17-35 RoHS Compliant: No
LJT 39C 38#22D 1#8(TWINAX) PIN
524228 WORDS x 8 BIT STATIC RAM
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| LC338128M LC338128P LC338128PL LC338128M-80 LC3381 |
1 MEG (131072 words x 8 bit) pseudo-SRAM
1MEG (131072 WORDS X 8BITS) PSEUDO-SRAM
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| LC3664RSL-12 LC3664RML-10 LC3664RM-15 LC3664RL-15 |
Access time: 100ns; V(cc)max: 7V; 64K (8192 words x 8-bit) SRAM
Access time: 150ns; V(cc)max: 7V; 64K (8192 words x 8-bit) SRAM
|
SANYO
|
| MB85415 |
16384 Words x 36-Bit
|
Fujitsu
|
| MJ2812 |
32 WORDS X 8 BIT FIFO MEMORY
|
Zarlink Semiconductor Inc
|
| LC35256FM LC35256FM-70U FT-55U FT-70U LC35256FT-70 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
256K (32768 words 8 bits) SRAM Control Pins: NOT OE and NOT CE
256K (32768 words x 8 bits) SRAM Control Pins: Not OE and Not CE
256K (32768 words X 8 bits) SRAM Control Pins: OE and CE
256K (32768 words 8 bits) SRAM Control Pins: OE and CE
SRAM,32KX8,CMOS,SOP,28PIN,PLASTIC
From old datasheet system
|
Intersil
Sanyo Semiconductor Corp
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| THM94000L-10 THM94000L-80 THM94000S THM94000S-10 T |
4/194/304 WORDS x 9 BIT DYNAMIC RAM MODULE
4,194,304 WORDS x 9 BIT DYNAMIC RAM MODULE
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| THM72V2010AG THM72V2010AG-70 THM72V2010ATG-60 THM7 |
2,097,152 WORDS X 72 BIT DYNAMIC RAM MODULE
|
Toshiba Semiconductor
|
| THM72V2010AG THM72V2010AG-60 THM72V2010AG-70 |
2,097,152 WORDS X 72 BIT DYNAMIC RAM MODULE
|
Toshiba Semiconductor
|
| GM71C4400ET-80 GM71C4400E GM71C4400E-60 GM71C4400E |
x4 Fast Page Mode DRAM
1,048,576 Words x Bit Organization
|
LG[LG Semicon Co.,Ltd.]
|
