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PF01411B - MOS FET Power Amplifier Module for E-GSM Handy Phone

PF01411B_216088.PDF Datasheet

 
Part No. PF01411B
Description MOS FET Power Amplifier Module for E-GSM Handy Phone

File Size 25.62K  /  4 Page  

Maker


HITACHI[Hitachi Semiconductor]



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Part: PF01411B
Maker: HIT
Pack:
Stock: Reserved
Unit price for :
    50: $6.20
  100: $5.89
1000: $5.58

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-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
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4 Amps, 600 Volts N-CHANNEL POWER MOSFET
UTC
ROHM[Rohm]
 
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