| PART |
Description |
Maker |
| PEEL22CV10AP-25 PEEL22CV10AP-10 PEEL22CV10AP-15 PE |
PEEL?/a> 22CV10A-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device
PEEL⑩ 22CV10A-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device
PEEL 22CV10A-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device
PEEL?/a> 22CV10A-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device
PEEL?/a> 22CV10A-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device
|
ANACHIP[Anachip Corp]
http://
|
| BR24L08FVM-W BR24L08FJ-W BR24L08FV-W BR24L08F-W BR |
10248 bit electrically erasable PROM
1024】8 bit electrically erasable PROM
|
ROHM[Rohm]
|
| IS93C46-3 IS93C46-3G IS93C46-3GI IS93C46-3GR IS93C |
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM 1,024位串行电可擦除可编程ROM
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
|
| PA7540P-15 PA7540PI-15 PA7540S-15 PA7540SI-15 PA75 |
PA7540 PEEL Array Programmable Electrically Erasable Logic Array
PA7540 PEEL Array? Programmable Electrically Erasable Logic Array
PA7540 PEEL Array Programmable Electrically Erasable Logic Array
|
http://
ETC
ANACHIP[Anachip Corp]
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
| ATF22LV10CQZ-30PC ATF22LV10CQZ-30JI ATF22LV10CQZ-3 |
Electrically-Erasable PLD 电可擦除可编程逻辑器件
|
Atmel, Corp.
|
| W27E020 W27E020-12 W27E020-70 W27E020-90 W27E020P- |
256K X 8 ELECTRICALLY ERASABLE EPROM
|
Winbond Electronics Corp
WINBOND[Winbond]
|
| LVT16V8-6A LVT16V8-6DB |
Electrically-Erasable PLD 电可擦除可编程逻辑器件
|
NXP Semiconductors N.V.
|
| GAL20V8AS-20HC3J GAL20V8AS-15EC3J GAL20V8AS-20QC3J |
Electrically-Erasable PLD 电可擦除可编程逻辑器件
|
MEAN WELL Enterprises Co., Ltd.
STMicroelectronics N.V.
|
| PALCE24V10H-15PC PALCE24V10H-25PC |
Electrically-Erasable PLD 电可擦除可编程逻辑器件
|
Fujitsu, Ltd.
|
