| PART |
Description |
Maker |
| W25X16VSSIG W25X32VSSIG W25X64VSSIG W25X16VSFI W25 |
16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond
|
| MBM29DL161BD MBM29DL161BE70PFTN MBM29DL161BE70PFTR |
16M (2M x 8/1M x 16) BIT Dual Operation
|
FUJITSU[Fujitsu Media Devices Limited]
|
| K8D1716U K8D1716UT K8D1716UB K8D1716UBB-TC07 K8D17 |
16M Dual Bank NOR Flash Memory
16M BIT (2M X8/1M X16) DUAL BANK NOR FLASH MEMORY
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MX25L1605ZM MX25L1605ZMC-20 MX25L1605ZMC-20G MX25L |
16M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY 16M X 1 FLASH 2.7V PROM, DSO8
|
Macronix International Co., Ltd.
|
| LH28F160S5H-L |
16M-bit (2MB x 8/1MB x 16) Smart 5 Flash Memories(16M(2Mx 8/1Mx 16) Smart5 技术闪速存储器)
|
Sharp Corporation
|
| W25X16AVSNIG W25X16AVSSIG W25X16ALSFIG W25X16AVSFI |
16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond
http://
|
| TC58FVB160-12 TC58FVB160-85 |
16M Bit (1M×16Bits ) CMOS NAND EEPROM(16M CMOS与非EEPROM) 1,600位（100万16位）的CMOS闪存EEPROM的（1,600 EEPROM中的CMOS与非
|
Toshiba Corporation
Toshiba, Corp.
|
| K8D1716UTC K8D1716UTC-PC07 K8D1716UBC K8D1716UTC-T |
16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
|
SAMSUNG[Samsung semiconductor]
|
| W25Q16CVSSIL W25Q16CVSFIL W25Q16CVSNIL W25Q16CVSTI |
3V 16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
|
Winbond
|
| W25Q16CL W25Q16CLDAIG W25Q16CLDAIP W25Q16CLSFIG W2 |
2.5V 16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
|
Winbond
|
| W25Q16DVSVIG W25Q16DVSVIP W25Q16DVDAIG W25Q16DVDAI |
3V 16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
|
Winbond
|
