| PART |
Description |
Maker |
| ISL6144 ISL6144IVZA ISL6144IR ISL6144IRZA ISL6144I |
High voltage ORing MOSFET controller.
|
Intersil Corporation
|
| ISL614407 ISL6144IVZA ISL6144 ISL6144IR ISL6144IRZ |
High Voltage ORing MOSFET Controller
|
INTERSIL[Intersil Corporation]
|
| SML100W18 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):17.3A,Rds(on):0.57Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
|
SemeLAB
SEME-LAB[Seme LAB]
|
| AS3833-ZSOT AS3833-ZTQT |
6 channel high-precision LED cont rol ler for 3D-LCD backl ight with integrated step-up cont rol ler
|
ams AG
|
| ST26C32A ST26C32ABD ST26C32ABDR ST26C32ABN ST26C32 |
FPGA, FLEX 10KE, 30K GATES, PQFP208; Logic IC family:FPGA; Logic IC Base Number:10; Logic IC function:EPF10K30E; Voltage, supply:2.5V; Case style
MOSFET, N, SO-8; Transistor type:MOSFET; Current, Id cont:3.2A; Resistance, Rds on:5R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak
CMOS QUAD 3-STATE DIFFERENTIAL LINE RECEIVER
|
意法半导
STMicroelectronics
|
| ALD521DSD ALD521D ALD521DPD |
MOSFET, P POWERPAKMOSFET, P POWERPAK; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:30V; Case style:PowerPak SO-8; Current, Id cont:11A; Current, Idm pulse:50A; Power, Pd:1.8W; Resistance, Rds on:0.0085R; SMD:1;
24 BIT SERIAL INTERFACE DIGITAL CONTROLLER
|
Advanced Linear Devices, Inc.
ALD[Advanced Linear Devices]
|
| IRFM250 |
N-Channel Power MOSFET(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）7.4A，的Rds（on）：0.100Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）7.4A时，RDS（对）：0.100Ω））
|
Electronic Theatre Controls, Inc.
SEME-LAB
Seme LAB
|
| BSC009NE2LS |
Optimized for e-fuse and ORing application
OptiMOSTM Power-MOSFET
|
List of Unclassifed Manufacturers
Infineon Technologies A...
|
| MAX8585EUA MAX8535EUA MAX8536EUA MAX8535 MAX8535AE |
ORing MOSFET Controllers with Fastest Fault Isolation for Redundant Power Supplies
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
|
| IRFE230 2N6798U |
N-Channel Power MOSFET(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）.8A时，RDS（上）：0.46Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）.8A时，RDS（对）：0.46Ω））
N-Channel N沟道
|
NXP Semiconductors N.V.
TT electronics Semelab Limited
Seme LAB
|
| AUIRS2112S |
The AUIRS2112S is a high voltage, high speed power MOSFET and IGBT driver with independent high- and lowside referenced output channels.
|
International Rectifier
|
| IR2308 IR2308S |
High Voltage and High Speed power MOSFET and IGBT Half Bridge Driver in a 8-pin DIP package
High Voltage and High Speed power MOSFET and IGBT Half Bridge Driver in a 8-lead SOIC package
|
International Rectifier
|
