| PART |
Description |
Maker |
| M68732EH 68732EH M68732 |
SILICON MOS FET POWER AMPLIFIER / 450-470MHz / 7W / FM PORTABLE RADIO
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 520-530MHz, 6.5W, FM PORTABLE RADIO
From old datasheet system
SILICON MOS FET POWER AMPLIFIER / 520-530MHz / 6.5W / FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| PF0031 |
MOS FET Power Amplifier Module
|
Hitachi
|
| PF08109B |
MOS FET Power Amplifier Module
|
Hitachi
|
| PF0311 |
MOS FET Power Amplifier Module for VHF Band
|
HITACHI[Hitachi Semiconductor]
|
| PF0031 |
MOS FET Power Amplifier Module for Mobile Phone
|
HITACHI[Hitachi Semiconductor]
|
| PF01411B |
MOS FET Power Amplifier Module for E-GSM Handy Phone
|
HITACHI[Hitachi Semiconductor]
|
| PF0121 |
MOS FET Power Amplifier Module for GSM Mobile Phone
|
Hitachi Semiconductor
|
| M67799UHA |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 470-490MHz, 7W, FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| PF08134B |
ASSP>Mobile Phones>RF Power Amplifiers
MOS FET Power Amplifier Module for GSM850 and DCS1800/1900 Triple Band Handy Phone
From old datasheet system
|
RENESAS[Renesas Electronics Corporation]
|
| E2081606PF08127B |
MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone 场效应晶体管功率放大器模块，电子GSM和DCS1800/1900三频手持电话
|
Renesas Electronics, Corp.
|
| MP6801 |
Power MOS FET Module Silicon N / P Channel MOS Type
TOSHIBA POWER MOS FET MODULE SILICON & P CHANNEL MOS TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK410 |
RF POWER, FET
From old datasheet system
Silicon N-Channel MOS FET (HF/VHF power amplifier)
|
Hitachi Semiconductor
|
