| PART |
Description |
Maker |
| K6T1008C2C K6T1008C2C-RB55 K6T1008C2C-RB70 K6T1008 |
128K X 8 STANDARD SRAM, 70 ns, PDSO32
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功CMOS静态RAM
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功耗CMOS静态RAM
55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM
55ns; 128 x 8-bit low power CMOS static RAM
70ns; 128 x 8-bit low power CMOS static RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| BS62LV1600ECG70 BS62LV1600ECG55 BS62LV1600FCP55 BS |
Very Low Power CMOS SRAM 2M X 8 bit 极低功耗CMOS SRAMx 8
Very Low Power CMOS SRAM 2M X 8 bit 2M X 8 STANDARD SRAM, 55 ns, PBGA48
Very Low Power CMOS SRAM 2M X 8 bit 2M X 8 STANDARD SRAM, 55 ns, PDSO44
|
BRILLIANCE SEMICONDUCTOR INC
BRILLIANCE SEMICONDUCTOR, Inc.
Brilliance Semiconducto...
|
| KM6264B KM6264BLP-7L KM6264BLG-10 KM6264BLG-10L KM |
8K x 8 bit CMOS static RAM, 100ns, low low power
8K x 8 bit Low Power CMOS Static RAM
8Kx8 bit Low Power CMOS Static RAM 8Kx8位低功耗CMOS静态RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| BS62LV8005 BS62LV8005BC BS62LV8005BI BS62LV8005EC |
DDR-II, 25-Bit 1:1 or 14-Bit 1:2 Configurable Registered Buffer
Very Low Power/Voltage CMOS SRAM 1M X 8 bit
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| KM616FS4110ZI-10 KM616FS4110ZI-7 |
100ns; V(cc): -2 to 3V; 1W; 256K x 16-bit super low power and low voltage full CMOS static RAM
70ns; V(cc): -2 to 3V; 1W; 256K x 16-bit super low power and low voltage full CMOS static RAM
|
Samsung Electronic
|
| IDT6116 IDT6116LA IDT6116LA120D IDT6116LA120DB IDT |
Enhanced JFET Precision Operational Amplifier 8-PDIP 0 to 70 的CMOS静态RAM 16K的（2K × 8位）
Quad Enhanced JFET Low-Power Precision Operational Amplifier 14-PDIP -40 to 85 2K X 8 STANDARD SRAM, 20 ns, PDIP24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 20 ns, PDIP24
Enhanced-JFET Low-Power Low-Offset Quad Operational Amplifier 14-PDIP -40 to 85 2K X 8 STANDARD SRAM, 35 ns, PDIP24
TRANS NPN 80VCEO 1A MT-3 的CMOS静态RAM 16K的（2K × 8位）
Dual Enhanced JFET Precision Operational Amplifier 8-SOIC -40 to 85 的CMOS静态RAM 16K的（2K × 8位）
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 25 ns, PDIP24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 120 ns, CDIP24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 25 ns, CDIP24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 35 ns, CDIP24
TRANS NPN LF 50VCEO .1A SS-MINI 的CMOS静态RAM 16K的（2K × 8位）
20 characters x 2 Lines, 5x7 Dot Matric Character and Cursor 的CMOS静态RAM 16K的（2K × 8位）
Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-PDIP -40 to 85 2K X 8 STANDARD SRAM, 45 ns, CDIP24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 45 ns, PDSO24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 45 ns, PDIP24
Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-PDIP -40 to 85 2K X 8 STANDARD SRAM, 45 ns, PDIP24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 45 ns, CDIP24
Enhanced-JFET Low-Power Low-Offset Quad Operational Amplifier 14-SOIC 0 to 70 的CMOS静态RAM 16K的（2K × 8位）
CMOS STATIC RAM 16K (2K x 8 BIT) 的CMOS静态RAM 16K的（2K × 8位）
Enhanced-JFET Low-Power Low-Offset Dual Operational Amplifier 8-PDIP 0 to 70
Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-SO 0 to 70
Enhanced-JFET Precision Operational Amplifier 8-SOIC 0 to 70
Enhanced-JFET Low-Power Low-Offset Dual Operational Amplifier 8-SOIC 0 to 70
CABLE SMA-RA/SMA-RA 36 RG-58
Quad Enhanced JFET Low-Power Precision Operational Amplifier 14-PDIP 0 to 70
Quad Enhanced JFET Low-Power Precision Operational Amplifier 14-SO 0 to 70
CABLE SMA/BNC 12 RG-142
Quad Enhanced JFET Low-Power Precision Operational Amplifier 14-SOIC -40 to 85
Enhanced-JFET Low-Power Low-Offset Quad Operational Amplifier 14-PDIP 0 to 70
Enhanced JFET Precision Operational Amplifier 8-SOIC 0 to 70
Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-SOIC -40 to 85
Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-SOIC 0 to 70
|
INTEGRATED DEVICE TECHNOLOGY INC
AME, Inc.
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| K6T1008V2C K6T1008V2C-B K6T1008V2C-D K6T1008V2C-F |
128K x8 bit Low Power and Low Voltage CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| FMP1617DCX |
1M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
|
FIDELIX
|
| K6T8008C2M K6T8008C2M-B K6T8008C2M-F K6T8008C2M-RB |
1Mx8 bit Low Power and Low Voltage CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K6T2008U2A K6T2008U2A-B K6T2008U2A-F K6T2008U2A-FF |
256Kx8 bit Low Power and Low Voltage CMOS Static RAM
|
Samsung semiconductor
|
| FMP1617CC0-FXXX FMP1617CC0-G60E FMP1617CC0-G70E FM |
1M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
|
http://
FIDELIX
|
| FMP3217BAX-FXXX FMP3217BAX-GXXX FMP3217BAX-H60E FM |
2M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
|
FIDELIX
|
