| PART |
Description |
Maker |
| 2SK3475 |
Field Effect Transistor Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications
VHF-and UHF-band Amplifier Applications
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| 2SC5544YZ-TR-E 2SC5544YZ-TL-E |
Silicon NPN Epitaxial VHF / UHF wide band amplifier
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR 1.40 X 0.80 MM, 0.59 MM HEIGHT, MODIFIED SC-89, MFPAK-3
|
Renesas Electronics Corporation
|
| MT6L58AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| D1029UK |
METAL GATE RF SILICON FET 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| D1009UK |
METAL GATE RF SILICON FET 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
TT electronics Semelab, Ltd.
Seme LAB
|
| UTV120 |
UHF TV 470-860 MHz, Class A, Common Emitter; fO (MHz): 860; P(out) (W): 12; Gain (dB): 8.9; Vcc (V): 26.5; ICQ (A): 1.7; IMD Type (dB): -52; Case Style: 55JT-2 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
| KV2101 KV2001 KV2501-15 KV2501-00 KV2801 KV2801-30 |
VARACTOR DIODES HF/VHF/UHF Hyperabrupt Junction
UHF BAND, 50 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
UHF BAND, 200 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
UHF BAND, 155 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| AP85035 |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
STMICROELECTRONICS
|
| MRF1508 |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
|
| PD54003L-E |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
STMICROELECTRONICS
|
| RDL212 |
UHF Multi Channel Wide Band FM Transceiver
|
Radiometrix Ltd
|
| RX2M-458-10 TX2M-458-10 RX2M-458-5 TX2M-458-5 TX2I |
UHF Narrow Band FM multi channel radio modules
|
Radiometrix Ltd
|
|
