| PART |
Description |
Maker |
| SB50-18 |
180V, 5A Rectifier(高频整流应用的重复反向电80V，平均整流电A 整流
180V/ 5A Rectifier
Schottky Barrier Diode (Twin Type Cathode Common) 180V, 5A Rectifier
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| 2SK2490 |
VZ Series Power MOSFET(180V 10A)
|
Shindengen Electric Mfg.Co.Ltd
|
| 2SK2489 |
VZ Series Power MOSFET(180V 10A)
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
| 2SK2491 |
VZ Series Power MOSFET(180V 20A)
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
| FRP1000 FRP1010 FRP1015 FRP1020 FRP2010CC FRP2020C |
Ultra-fast POWER planar?/a> Rectifiers 10-20 A, 50-200 V
Ultra-fast POWER planar Rectifiers 10-20 A, 50-200 V
Ultra-fast POWER planar⑩ Rectifiers 10-20 A, 50-200 V
Ultra-fast POWER planar Rectifiers 10-20 A/ 50-200 V
Ultra-fast POWER planarRectifiers 10-20 A, 50-200 V
CAP 120PF 50V 5% NPO(C0G) SMD-0603 TR-7-PA
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| APT20M38SVFR APT20M38BVFRG APT20M38BVFR06 APT20M38 |
Power FREDFET; Package: D3 [S]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| SB05-18V |
180V, 500mA Rectifier
|
SANYO[Sanyo Semicon Device]
|
| APT20M11JVR |
Power MOSFET; Package: ISOTOP®; ID (A): 175; RDS(on) (Ohms): 0.011; BVDSS (V): 200; 175 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 175A 0.011 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| APT20M22LVR APT20M22LVRG |
Power MOSFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 100A 0.022 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| SB100-18 |
180V, 10A Rectifier(用于高频整流应用的重复反向电180V，平均整流电0A整流
Schottky Barrier Diode
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| BD115 |
0.875W High Voltage NPN Metal Can Transistor. 180V Vceo, 0.200A Ic, 22 hFE.
|
Continental Device India Limited
|
