| PART |
Description |
Maker |
| 4816P-1-181 4816P-3-331/471 4816P-3-161/241 4814P- |
RNET-THK FILM SMD MED BODY RESISTOR, NETWORK, FILM, ISOLATED, 1.28 W, SURFACE MOUNT
RNET-THK FILM SMD MED BODY RESISTOR, NETWORK, FILM, TERMINATOR, 1.28 W, SURFACE MOUNT
RNET-THK FILM SMD MED BODY RESISTOR, NETWORK, FILM, ISOLATED, 1.12 W, SURFACE MOUNT
RES NTWK,Thick Film,100Ohms,50WV,2 /-% Tol,-100,100ppm-TC,4422-Case RoHS Compliant: Yes RESISTOR, NETWORK, FILM, ISOLATED, 1.28 W, SURFACE MOUNT
|
Bourns, Inc.
|
| E000975 2SC4682 |
From old datasheet system
STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
Toshiba
|
| 2SA116009 |
Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SA1431-Y |
5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SA1357 E000517 |
TRANSISTOR (STROBE FLASH/ AUDIO POWER AMPLIFIER APPLICATIONS)
TRANSISTOR (STROBE FLASH, AUDIO POWER AMPLIFIER APPLICATIONS)
STROBE FLASH APPLICATIONS AUDIO POWER AMPLIFIERAPPLICATIONS
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC5765 |
Transistor Silicon NPN Epitaxial Planar Type MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS
|
TOSHIBA
|
| 2SA1327A |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Audio Power Amplifier Applications
|
TOSHIBA
|
| 2SA1300 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications
|
TOSHIBA
|
| 2SC3670 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STOROBO FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
|
