| PART |
Description |
Maker |
| SML20W65 SML20B56 |
HIGH POWER TERMINATION 56 A, 200 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
TT electronics Semelab, Ltd.
Seme LAB
|
| HAT1025R-EL-E HAT1025R-15 |
4.5 A, 20 V, 0.15 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Silicon P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics, Corp.
Renesas Electronics Corporation
|
| HI1-0518-5 HI1-0518-8 HI3-0518-5 HI-518 FN3147 |
8-Channel/Differential 4-Channel,CMOS high speed andlog multiplexer 4-CHANNEL, DIFFERENTIAL MULTIPLEXER, CDIP18
RESISTOR POWER 125 OHM 8W 5% 4-CHANNEL, DIFFERENTIAL MULTIPLEXER, PDIP18
8-Channel/Differential 4-Channel/ CMOS High Speed Analog Multiplexer
64 MACROCELL 3.3 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN
8-Channel/Differential 4-Channel, CMOS High Speed Analog Multiplexer
8-Channel/Differential 4-Channel CMOS High Speed Analog Multiplexer
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| APT8030JVFR_05 APT8030JVFR APT8030JVFR05 |
25 A, 800 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
|
| GT25Q102 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications
N CHANNEL IBGT (HIGH POWER SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| MIG20J806HA MIG20J806H EE08617 |
Silicon N-channel integrated IGBT module for high power switching, motor control applications
N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
From old datasheet system
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) N通道IGBT的（大功率开关，马达控制应用
|
TOSHIBA[Toshiba Semiconductor]
Toshiba, Corp.
|
| STK417-130 STK417-000 STK417-090 STK417-0X0 |
2 CHANNEL HIGH EFFICIENCY AF POWER AMPLIFIER
2-Channel High Effiency AF Power Amplifier 50W x 2 ~ 100W X 2
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| SML40H28 SML40H28R1 |
28 A, 400 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
SEMELAB LTD
SEME-LAB[Seme LAB]
|
| SML60B16 SML60B25 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 25 A, 600 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| SML80B16 SML80B12 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 16 A, 800 V, 0.56 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
TT electronics Semelab, Ltd.
|
| H5N2803PF-E |
30 A, 280 V, 0.047 ohm, N-CHANNEL, Si, POWER, MOSFET
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
