| PART |
Description |
Maker |
| MCM6246WJ35R2 MCM6246WJ35 MCM6246WJ25R2 MCM6246WJ2 |
512K x 8 Bit Static Random Access Memory 512K X 8 STANDARD SRAM, 35 ns, PDSO36
PSU, 110W, 4 OUTPUT; Voltage, output:5V; Current, output:11A; Power rating:110W; Voltage, supply min:85V; Voltage, supply max:264V; Length / Height, external:56mm; Width, external:108mm; Depth, external:185mm; Approval Bodies:VDE, RoHS Compliant: Yes
DC-DC Converter; Supply Voltage:75V; Output Voltage:1.2V; Number of Outputs:1; Power Rating:100W; Mounting Type:PC Board; Series:Eighth-Brick; Efficiency:86%; Output Current:50A; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| WS1M8V-100CC WS1M8V-100CM WS1M8V-100CMA |
100ns; 3.3V power supply; 2 x 512K x 8 dualithic module
|
White Electronic Designs
|
| EDI8L32128C12AI EDI8L32128C15AI EDI8L32128C20AI ED |
15ns; 5V power supply; 128K x 32 CMOS high speed static RAM
20ns; 5V power supply; 128K x 32 CMOS high speed static RAM
17ns; 5V power supply; 128K x 32 CMOS high speed static RAM
|
White Electronic Designs
|
| 5962-88724013X 5962-88724043X 5962-87539053X 5962- |
t(pd): 25ns; t(s): 18ns; t(co): 15ns; -2.0 to 7.0V; Vcc power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device
t(pd): 20ns; t(s): 17ns; t(co): 15ns; -2.0 to 7.0V; Vcc power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to 7.0V; Vcc power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to 7.0V; V power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to 7.0V; Vcc power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to 7.0V; Vcc power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device
|
Atmel
|
| E28F004BL-T150 E28F004BL-B150 E28F400BL-T150 PA28F |
4-MBlT (256K x 16/ 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY
ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80%
Series 320 tactile switch with multiple color and cap options
FireWire Current Limiter and Low-Drop ORing Switch Controller 4 MBlT56K × 16。为512k × 8）低功耗启动块闪存系列
4-MBlT (256K x 16. 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 4 MBlT56K × 16。为512k × 8）低功耗启动块闪存系列
4-MBlT (256K x 16, 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 512K X 8 FLASH 12V PROM, 150 ns, PDSO40
4-MBlT (256K x 16, 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 512K X 8 FLASH 12V PROM, 150 ns, PDSO56
|
Intel Corporation
Intel Corp.
Rochester Electronics, LLC
Intel, Corp.
Sharp, Corp.
|
| ASM809TEUR-T ASM810TEUR ASM810SEUR ASM810REUR ASM8 |
4.00 V, 3 pin microcontroller power supply supervisor
4 V, 3 pin microcontroller power supply supervisor
2.93 V, 3 pin microcontroller power supply supervisor
3.08 V, 3 pin microcontroller power supply supervisor
2.63 V, 3 pin microcontroller power supply supervisor
4.38 V, 3 pin microcontroller power supply supervisor
4.63 V, 3 pin microcontroller power supply supervisor
3 Pin Microcontroller Power Supply Supervisor 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO3
Low Power CPU Supervisors
|
Alliance Semiconductor, Corp.
ALSC
Alliance Semiconductor Corporation
Alliance Semiconductor Corp...
|
| IS62WV51216BLL-55BLI IS62WV51216ALL-70XI IS62WV512 |
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 512K X 16 STANDARD SRAM, 45 ns, PBGA48
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 12k × 16低电压，超低功耗的CMOS静态RAM
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 512K X 16 STANDARD SRAM, 55 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
| AS5C4009ECJ-85L_883C AS5C4009ECJ-85L_IT AS5C4009EC |
512K x 8 SRAM Ultra Low Power SRAM
512K X 8 STANDARD SRAM, 100 ns, CDIP32
512K X 8 STANDARD SRAM, 85 ns, CDSO32
512K X 8 STANDARD SRAM, 70 ns, CDSO32
512K X 8 STANDARD SRAM, 55 ns, CDSO32
|
MICROSS COMPONENTS
AUSTIN SEMICONDUCTOR INC
|
| W963A6BBN80E |
512K WORD X 16 BIT LOW POWER PSEUDO SRAM 512K X 16 PSEUDO STATIC RAM, 75 ns, PBGA48
|
Winbond Electronics, Corp.
|
| K6F8016V3A K6F8016V3A-F K6F8016V3A-TF55 K6F8016V3A |
512K X 16 STANDARD SRAM, 55 ns, PDSO44
From old datasheet system
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| 82NXXL-AF5-B-R 82NXXG-AE3-5-R 82NXXG-T92-E-K 82NXX |
VOLTAGE DETECTORS
1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO3 LEAD FREE, SOT-23, 3 PIN
1-CHANNEL POWER SUPPLY SUPPORT CKT, PBCY3
1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5
1-CHANNEL POWER SUPPLY SUPPORT CKT, PSSO3
|
http://
Unisonic Technologies Co., Ltd.
UNISONIC TECHNOLOGIES CO LTD
|
