| PART |
Description |
Maker |
| MRFG35010MT1 |
MRFG35010MT1 3.5 GHz, 9 W, 12 V Power FET GaAs PHEMT
Gallium Arsenide PHEMT
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MRFG35020AR1 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
| MRFG35010MT1 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
| MRFG35003MT1 |
The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc.
|
| T1P3003028-SP |
30 W, 28V, 500 MHz-2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor
|
TriQuint Semiconductor
|
| AS222-92 |
AS222-92:PHEMT GaAs IC SPDT Switch 0.1 GHz|DC-6 GHz Plastic Packaged and Chip|SPST AS222 - 92：PHEMT的砷化镓集成电路单刀双掷开.1-3千兆赫|直流- 6 GHz的塑料包装和芯片|聚苯乙烯
PHEMT GaAs IC SPDT Switch 0.1 - 3 GHz
|
SKYWORKS[Skyworks Solutions Inc.]
|
| HMC441 HMC440QS16G HMC441LM1 |
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER/ 7.0 - 15.5 GHz
HBT DIGITAL PHASE-FREQUENCY DETECTOR/ 10 - 1300 MHz/ w/ INTEGRATED 5-BIT COUNTER/ 10 - 2800 MHz
800000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.0 - 18.0 GHz
|
美国讯泰微波有限公司上海代表
HITTITE[Hittite Microwave Corporation]
|
| AS185-92 |
ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80%
PHEMT GaAs IC High Linearity Positive Control SPDT Switch DC-2 GHz
PHEMT GaAs IC High Linearity Positive Control SPDT Switch DC GHz
|
Alpha Industries, Inc.
Alpha Industries Inc
|
| AE663 |
E-pHEMT
|
RFHIC
|
| AE608 |
E-pHEMT
|
RFHIC
|
| AE616 |
E-pHEMT
|
RFHIC
|
| FPD1000V |
1W POWER PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
