| PART |
Description |
Maker |
| TC58512FT |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 马鞍山暂定东芝数字集成电路硅栅CMOS
512-MBIT (64M x 8 BITS) CMOS NAND E2PROM
|
Toshiba, Corp.
|
| TPCF8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
Toshiba Semiconductor
|
| SSM3J325F |
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS??
|
Toshiba Semiconductor
|
| MP4403 |
TOSHIBA POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE
|
Toshiba Semiconductor
|
| TPC8111 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
|
Toshiba Semiconductor
|
| MP4203 |
TOSHIBA POWER MOS FET MODULE SILICON P CHANNEL MOS TYPE
|
Toshiba Semiconductor
|
| TPCF8201 TPCF820107 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
|
Toshiba Semiconductor
|
| TPCF8001 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
|
Toshiba Semiconductor
|
| TPCF8101 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
|
TOSHIBA[Toshiba Semiconductor]
|
| TPC8210 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
|
Toshiba Semiconductor
|
| TPC8014 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
|
TOSHIBA
|
