| PART |
Description |
Maker |
| K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R44 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
| HYR183240G-845 HYR183240G-840 HYR183240G-745 HYR18 |
RDRAMModules - 256MB RIMM Module (128Mx16) PC800-45 Discontinued RDRAMModules - 128MB RIMM Module (64Mx18) PC800-45 Discontinued RDRAMModules - 512MB RIMM Module (256Mx18) PC600-53 Discontinued RDRAMModules - 256MB RIMM Module (128Mx18) PC600-53 Discontinued RDRAMModules - 128MB RIMM Module (64Mx16) PC600-53 Discontinued RDRAMModules - 128MB RIMM Module (64Mx18) PC600-53 Discontinued RDRAMModules - 256MB RIMM Module (128Mx16) PC600-53 Discontinued RDRAM?Modules - 128MB RIMM Module (64Mx18) PC800-45 Discontinued 128 MB (64M x 18) PC800-40 ECC RIMM M... RDRAM?Modules - 512MB RIMM Module (256Mx18) PC800-45 Discontinued 512 MB (256 Mx 18) PC800-40 ECC RIMM ... RDRAM?Modules - 256MB RIMM Module (128Mx18) PC800-45 Discontinued 256 MB (128M x 18) PC800-40 ECC RIMM ... RDRAM?Modules - 128MB RIMM Module (64Mx16) PC800-45 Discontinued 128 MB (64M x 16) PC800-40 RIMM Module RDRAM?Modules - 64MB RIMM Module (32Mx16) PC800-45 Discontinued RDRAM?Modules - 256MB RIMM Module (128Mx16) PC800-45 Discontinued 256 MB (128M x 16) PC800-40 RIMM Module Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs) 直接的RDRAM RIMM的模块(88兆RDRAMs
|
INFINEON[Infineon Technologies AG]
|
| MBM29F400TA MBM29F400BA |
4M (512K×8/256K ×16) Bit Flash Memory(4M V 电源电压512K×8/256K ×16位闪速存储器) 4分(12k × 8/256K × 16)位闪存分单5V的电源电压为512k × 8/256K × 16位闪速存储器
|
Fujitsu Limited
|
| AT25128A AT25256A |
128/256K, SPI Bus Serial EEPROM, high speed, supports SPI mode 0 and 3.
|
Atmel
|
| GS880E32AT-250 |
512K x 18, 256K x 32, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 32 CACHE SRAM, 5.5 ns, PQFP100
|
GSI Technology, Inc.
|
| HY5R144HCXXX |
(HY5R1xxHCxxx) RDRAM
|
Hynix Semiconductor
|
| K4R271669F |
128Mbit RDRAM(F-die)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4R881869I-DC |
Direct RDRAM Product Guide
|
Samsung semiconductor
|
| K4R881869D K4R571669D |
256/288Mbit RDRAM(D-die)
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
| AS7C33256PFS18A-166TQI AS7C33256PFS16A AS7C33256PF |
3.3V 256K x 16/18 pipeline burst synchronous SRAM 3.3V 256K×18 Ppipeline Burst Synchronous SRAM(3.3V 256K×18流水线脉冲同步静态RAM) 3.3 256K × 18 Ppipeline突发同步SRAM的电压(3.3V 256K × 18流水线脉冲同步静态内存) 3.3V 256K 】 16/18 pipeline burst synchronous SRAM 3.3V 256K x 16 pipeline burst synchronous SRAM, clock speed - 133MHz 3.3V 256K × 16/18 pipeline burst synchronous SRAM
|
Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation] Alliance Semiconductor ...
|
| MSM5716C50 |
(MSM5716C50 / MSM5718C50 / MSM5764802) 16M / 18M / 64M Concurrent RDRAM
|
OKI
|