Part Number Hot Search : 
RF2054SR KSPA10L MC33218A RT8868A SMF8V0A 88E1116R D7225G B57703M
Product Description
Full Text Search

K4S511632M - 512Mbit SDRAM

K4S511632M_195962.PDF Datasheet

 
Part No. K4S511632M K4S511632M-TC K4S511632M-TL1H K4S511632M-TL1L K4S511632M-TL75
Description 512Mbit SDRAM

File Size 110.24K  /  11 Page  

Maker


Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: K4S511632B-UC75
Maker: SAMSUNG
Pack: TSOP
Stock: Reserved
Unit price for :
    50: $12.65
  100: $12.02
1000: $11.38

Email: oulindz@gmail.com

Contact us

Homepage http://www.samsung.com/Products/Semiconductor/
Download [ ]
[ K4S511632M K4S511632M-TC K4S511632M-TL1H K4S511632M-TL1L K4S511632M-TL75 Datasheet PDF Downlaod from Datasheet.HK ]
[K4S511632M K4S511632M-TC K4S511632M-TL1H K4S511632M-TL1L K4S511632M-TL75 Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for K4S511632M ]

[ Price & Availability of K4S511632M by FindChips.com ]

 Full text search : 512Mbit SDRAM
 Product Description search : 512Mbit SDRAM


 Related Part Number
PART Description Maker
K4S510732B K4S510732B-TC1H K4S510732B-TC1L K4S5107 Stacked 512Mbit SDRAM
Samsung semiconductor
HYB25D512160BE-6 HYB25D512800BE-5 HYB25D512160BC-5 512Mbit Double Data Rate SDRAM
INFINEON[Infineon Technologies AG]
M39P0R9070E2 M39P0R9070E2ZADE M39P0R9070E2ZADF 256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package
Numonyx B.V
HY27USXXX HY27SS16121M HY27SSXXX HY27US08121M HY27 (HY27SSxxx) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 512兆(64Mx8bit / 32Mx16bit)NAND闪存
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
HYB25L512160AC-75 HYB25L512160AC 512MBit Mobile-RAM
INFINEON[Infineon Technologies AG]
HY57V56820BT HY57V56820BLT-S HY57V56820BT-S HY57V5 32Mx8|3.3V|8K|K|SDR SDRAM - 256M
SDRAM|4X8MX8|CMOS|TSOP|54PIN|PLASTIC
4 Banks X 8M X 8Bit Synchronous DRAM
SDRAM - 256Mb
Hynix Semiconductor
HY5S7B6ALFP-6 HY5S7B6ALFP-H HY5S7B6ALFP-S 512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O
Hynix Semiconductor
UPD4516821AG5-A12-7JF UPD4516421AG5-A12-7JF UPD451 x8 SDRAM
x4 SDRAM x4内存
x16 SDRAM x16内存
NEC, Corp.
Infineon Technologies AG
K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632 128Mb SDRAM, 3.3V, LVTTL, 133MHz
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187
; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No
128Mb SDRAM, 3.3V, LVTTL, 166MHz
128Mb SDRAM, 3.3V, LVTTL, 183MHz
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
IBM13N8734HCB-260T IBM13N8734HCC-260T IBM13N8644HC x72 SDRAM Module
x64 SDRAM Module
8M x 64 One-Bank Unbuffered SDRAM Module(8M x 64 1组不带缓冲同步动态RAM模块) 8米64单银行无缓冲内存模组米64一组不带缓冲同步动态内存模块)
International Business Machines, Corp.
UPD4516161G5-A15-7JF UPD4516421G5-A15-7JF UPD45168 x4 SDRAM
x8 SDRAM
x16 SDRAM x16内存
Mitsubishi Electric, Corp.
 
 Related keyword From Full Text Search System
K4S511632M marking code K4S511632M 的参数 K4S511632M Microelectronic K4S511632M national K4S511632M saw filter
K4S511632M PDF K4S511632M 资料网站 K4S511632M products K4S511632M Microcontroller K4S511632M Bit
 

 

Price & Availability of K4S511632M

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.40593504905701