| PART |
Description |
Maker |
| TPC8104-H |
Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII) High Speed and High Efficiency DC .DC Converters Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII)
|
Toshiba Corporation
Toshiba Semiconductor
|
| SSM6E01TU |
Multi-Chip Device Silicon P-Channel MOS Type (U-MOS II) N-Channel MOS Type (Planer) Load Switch Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SJ353 2SJ353-T D11216EJ1V0DS00 |
From old datasheet system
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
P-channel MOS-type silicon field effect transistor (-60
|
NEC[NEC]
|
| 2SJ200 |
P CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| UPA1716 UPA1716G PA1716 UPA1716G-E1 UPA1716G-E2 |
Pch enhancement type power MOS FET
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
MOS Field Effect Transistor
|
NEC[NEC]
|
| GT60M303 EE07978 |
N CHANNEL MOS TYPE (HIGH POWER SWITCHING APPLICATIONS)
From old datasheet system
|
Toshiba Semiconductor
|
| 2SK2467-Y 2SK2467 E001484 |
N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| GT60M301 E001942 |
N CHANNEL MOS TYPE (HIGH POWER SWITHCING APPLICATIONS)
From old datasheet system
HIGH POWER SWITCHING APPLICATIONS
|
Toshiba Semiconductor
|
| APT6010B2LL APT6010LLL APT6010LLLG APT6010B2LLG |
54 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 MOSFET
|
Microsemi Corporation
|
| TPC8016-H |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III)
|
Toshiba Corporation
Toshiba Semiconductor
|
| 2SK154406 |
N Channel MOS Type (pie -MOS III.5) High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications
|
Toshiba Semiconductor
|
