| PART |
Description |
Maker |
| MAX2680 MAX2681 MAX2682 MAX268003 MAX2680EUT |
400MHz to 2.5GHz, Low-Noise, SiGe Downconverter Mixers
|
Maxim Integrated Products
MAXIM - Dallas Semiconductor
|
| SGB-2233 |
DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK High Reliability SiGe HBT Technology
|
RF Micro Devices
|
| BGA430 BGB540 |
A 35 dB Gain-Sloped LNB I.F. Amplifier for Direct Broadcast Satellite Television Applications using the BGA430 & BGB540 Silicon MMICs
|
INFINEON[Infineon Technologies AG]
|
| NJG1556KB2 |
1.5GHz/1.9GHz Mixer GaAs MMIC(用于1.5GHz/1.9GHz频带数字移动电话的砷化镓单片微波集成电路混频
|
New Japan Radio Co., Ltd.
|
| BGB420 BGB420E6327 |
Active Biased Transistor
Silicon MMICs - Mirror-Biased BFP 420 in SIEGET 25 Technology, Icmax = 30mA, SOT343
MMIC, LNA
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| LT5515EUF |
1.5GHz to 2.5GHz Direct Conversion Quadrature Demodulator
|
Linear Technology
|
| SPM5001 |
GaAs MMICs
RF Double Balanced Mixer
|
SANYO
|
| MAX2642 MAX2642EXT-T MAX2642-MAX2643 MAX2643 MAX26 |
900MHz SiGe, High-Variable IP3, Low-Noise Amplifier
From old datasheet system
900MHz SiGe, High IP3, Low-Noise Amplifiers
900MHz SiGe / High IP3 / Low-Noise Amplifiers
Hex inverters 14-SOIC 0 to 70
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maixm
Maxim Integrated Products, Inc.
|
| AN26102A AN26102A-14 |
SiGe Linear Power Amplifier for 2.4 GHz Band Applications
SiGe Bi-CMOS Monolithic IC, WLCSP PKG Power Amplifi er
|
Panasonic Battery Group
|
| NBSG16MNR2 NBSG16MN NBSG16BAR2 NBSG16BAEVB NBSG16B |
2.5 V/3.3 V SiGe Differential Receiver/Driver with RSECL Outputs
From old datasheet system
2.5V/3.3V SiGe Differential Receiver/Driver with RSECLOutputs
|
ONSEMI[ON Semiconductor]
|
| GN04042N |
GaAs device - GaAs MMICs - Switch GaAs设备-砷化镓微波集成电开
|
Infineon Technologies AG
Panasonic
|
