| PART |
Description |
Maker |
| M58LR128GU |
The M58LR128GU/L and M58LR256GU/L are 128 Mbit (8 Mbit x16) and 256 Mbit (16 Mbit
|
ST Microelectronics, Inc.
|
| S29GL256S |
1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory
|
Cypress Semiconductor
|
| M420000004 M420000006 M420000007 M42000000I M42000 |
Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2 Mbit (128 K x 16-Bit) Static RAM
|
AMD[Advanced Micro Devices]
|
| AM49LV128BMAH11NS AM49LV128BMAH11NT AM49LV128BMAH1 |
128 Megabit (8 M x 16-Bit) MirrorBit Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit)
|
SPANSION
|
| AM29LV128M |
128 Mbit (8 M x 16-Bit/16 M x 8-Bit) Uniform Sector with VersatileI/O Control (Advance Information)
From old datasheet system
|
AMD Inc
|
| IC43R32400 IC43R32400-5BG IC43R32400-4B IC43R32400 |
DYNAMIC RAM
1M x 32 Bit x 4 Banks (128-MBIT) DDR SDRAM
|
Integrated Circuit Solu...
ICSI[Integrated Circuit Solution Inc]
|
| AM29LV652D |
128 Mbit (16 M x 8-Bit) with VersatileI/O Control (Preliminary
From old datasheet system
|
AMD Inc
|
| NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
|
意法半导
STMicroelectronics N.V.
|
| M48Z129V-70PM1 M48Z129V-85PM1 M48Z129Y-70PM1 M48Z1 |
5.0 V or 3.3 V, 1 Mbit (128 Kb x 8) ZEROPOWER庐 SRAM
5.0 V or 3.3 V, 1 Mbit (128 Kb x 8) ZEROPOWER? SRAM
|
STMicroelectronics
|
| M36P0R9070E0 |
512 Mbit Flash memory 128 Mbit (Burst) PSRAM
|
Numonyx
|
| IS75V16F128GS32-7065BI |
3.0 Volt Multi-Chip Package (MCP) 128 Mbit Simultaneous Operation Flash Memory and 32 Mbit Pseudo Static RAM
|
Integrated Silicon Solution, Inc.
|
