| PART |
Description |
Maker |
| 2N6288 2N6109 2N6107 2N6111 2N6292 ON0079 |
39-50-70VOLTS 40 WATTS
POWER TRANSISTORS COMPLEMENTARY SILICON
From old datasheet system
|
ON Semiconductor
|
| PTB20038 |
25 Watts, 86000 MHz Cellular Radio RF Power Transistor
25 Watts, 860-900 MHz Cellular Radio RF Power Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| PTB20077 |
0.7 Watts, 1525660 MHz INMARSAT RF Power Transistor
0.7 Watts, 1525-1660 MHz INMARSAT RF Power Transistor
0.7 Watts 1525-1660 MHz INMARSAT RF Power Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| PTB20145 |
9 Watts, 91560 MHz Cellular Radio RF Power Transistor
9 Watts, 915-960 MHz Cellular Radio RF Power Transistor 9瓦，915-960兆赫蜂窝无线电射频功率晶体管
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| MJ10009 MJ10009_D ON1969 |
From old datasheet system
20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 175 WATTS
20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS 175 WATTS
|
Motorola Inc
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola, Inc]
|
| ACB-12-1931 |
power 6 CCFLs to a nominal power level of 32.4 Watts from an input voltage of 12V.
|
Applied Concepts Inc.
|
| AC9-V2R-1878 |
power typically 4CCFLs up to power levels of 20 Watts from a nominal 12V source.
|
Applied Concepts Inc.
|
| MDS500L |
new pulsed power transistor designed to provide 500 watts output power
|
Micrel Semiconductor
|
| PH1214-40M |
Radar Pulsed Power Transistor - 40 Watts/1.20-1.40 GHz/ 150ms Pulse/ 10% Duty
Radar Pulsed Power Transistor - 40 Watts,1.20-1.40 GHz, 150ms Pulse, 10% Duty 雷达脉冲功率晶体 401.20 - 1 .40千兆赫，150毫秒脉冲0％的
|
Ecliptek, Corp.
MACOM[Tyco Electronics]
|
| MJE18004 MJF18004 ON2021 |
POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS 5 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB
From old datasheet system
Switching Power Supply Applications
|
Motorola Mobility Holdings, Inc.
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
