| PART |
Description |
Maker |
| IRF530_D ON0283 IRF530-D IRF530/D |
100V4A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate100V4A TMOS功率场效应管（N沟道增强型硅门）)
TMOS POWER FET 14 AMPERES
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
ON Semiconductor
|
| IRFD112 IRFD113 |
(IRFD112 / IRFD113) POWER-MOSFET FIELD EFFECT POWER TRANSISTOR
|
GE Solid State
|
| MRF21090 MRF21090R3 MRF21090SR3 |
2170 MHz, 90 W, 28 V Lateral N–Channel RF Power MOSFET
RF Power Field Effect Transistors
|
Freescale (Motorola)
MOTOROLA[Motorola Inc]
Motorola, Inc
|
| MRF373ASR1 MRF373AR1 MRF373A |
MRF373AR1, MRF373ALSR1 470-860 MHz, 75 W, 32 V Lateral N-Channel Broadband RF Power MOSFETs
RF POWER FIELD EFFECT TRANSISTORS
|
MOTOROLA[Motorola, Inc]
MOTOROLA [Motorola, Inc]
|
| MAPLST1900-030CF |
L BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF Power Field Effect Transistor LDMOS, 1890 - 1925 MHz, 30W, 26V
|
Tyco Electronics
|
| APTGT25X120T3G |
3 Phase bridge Trench Field Stop IGBT? Power Module
3 Phase bridge Trench Field Stop IGBT垄莽 Power Module
|
Microsemi Corporation
|
| APTGT35X120T3G |
3 Phase bridge Trench Field Stop IGBT? Power Module
3 Phase bridge Trench Field Stop IGBT垄莽 Power Module
|
Microsemi Corporation
|
| APTGT75DA170T1G |
Boost chopper Trench Field Stop IGBT? Power Module
Boost chopper Trench Field Stop IGBT垄莽 Power Module
|
Microsemi Corporation
|
| APTGT150A60T1G |
Phase leg Trench Field Stop IGBT? Power Module
Phase leg Trench Field Stop IGBT垄莽 Power Module
|
Microsemi Corporation
|
| APTGT20A60T1G |
Phase leg Trench Field Stop IGBT? Power Module
Phase leg Trench Field Stop IGBT垄莽 Power Module
|
Microsemi Corporation
|
