| PART |
Description |
Maker |
| M28F512-12B1 M28F512-12C1 M28F512-10C1 28F256 M28F |
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory 512千位4Kb的x8整体擦除）Flasxh内存
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| M27C512 |
512 KBIT (64KB X8) UV EPROM AND OTP EPROM
|
ST Microelectronics
|
| SST29EE512-70-4I-EH SST29LE512-70-4I-EH SST29VE512 |
512 Kbit (64K x 8) page-mode EEPROM
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 EEPROM 3V, 200 ns, PDSO32
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 EEPROM 5V, 70 ns, PDSO32
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 3V PROM, 150 ns, PQCC32
512 Kbit (64K x8) Page-Mode EEPROM 512千位4K的8）页模式的EEPROM
512 Kbit (64K x8) Page-Mode EEPROM 512千位4K的8）页模式EEPROM
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PQCC32
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PDSO32
|
SILICON STORAGE TECHNOLOGY INC
Silicon Storage Technology, Inc.
|
| LH28F800BGH-L LH28F800BGR-TL85 LH28F800BGR-TL12 LH |
Aluminum Polymer Radial Lead Capacitor; Capacitance: 1800uF; Voltage: 4V; Case Size: 8x12 mm; Packaging: Bulk 8 M位（512 KB的16）SmartVoltage闪存
RES CURRENT SENSE .025 OHM 1W 1% 8 M位（512 KB的16）SmartVoltage闪存
8 M-bit (512 kB x 16) SmartVoltage Flash Memories 8 M位（512 KB的16）SmartVoltage闪存
|
http://
Sharp, Corp.
Sharp Corporation
Sharp Electrionic Compo...
|
| UL1401 |
Wzmacniacz mocy m.cz.
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE® serial access EEPROM
|
Ultra CEMI
|
| CY14B512Q2A-SXI CY14B512Q1A-SXI CY14B512Q1A-SXIT |
512-Kbit (64 K × 8) SPI nvSRAM
|
Cypress Semiconductor
|
| CY14B512J2-SXI CY14B512J2-SXIT |
512-Kbit (64 K 8) Serial (I-2C) nvSRAM
|
Cypress
|
| M93C46M93C46 M93C46M93C46-W M93C56M93C56 M93C56M93 |
16-Kbit, 8-Kbit, 4-Kbit, 2-Kbit and 1-Kbit (8-bit or 16-bit wide) MICROWIRE serial access EEPROM
|
STMicroelectronics
|
| SST25VF51210 |
512 Kbit SPI Serial Flash
|
Silicon Storage Technology, Inc
|
| CY14B512Q2-LHXI |
512-Kbit (64 K 8) Serial (SPI) nvSRAM
|
Cypress
|
