| PART |
Description |
Maker |
| MAR-1 MAR-3 MAR-4 |
(MAR-x ) ML AMPL / SURF MT / T&R / RoHS
|
Mini-Circuits
|
| AK4640 |
16BIT CODEC WITH MIC /HP/SPK-AMPl
|
Asahi Kasei Microsystems Co.,Ltd
|
| FD1500AV-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
600 A AC/DC CLAMP-ON DMM,TRMS RoHS Compliant: NA
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| FD2000DU-120 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE 高功率，高频率，按包装类
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| LA4581 LA4581MB |
Oscillator; Frequency:75MHz; Frequency Tolerance: /-50ppm; Load Capacitance:15pF; Supply Voltage:3.3V; Crystal Terminals:Surface Mount (SMD, SMT)
Preamplifier Power Amplifier for 3V Headphone Stereos
Preamplifier Power Amplifier for 3V Headphone Stereos
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| 550D08 550D107X9015S2 550D127X9015S2 550D157X9015S |
Solid-Electrolyte TANTALEX㈢ Capacitors for High Frequency Power Supplies
Solid-Electrolyte TANTALEX? Capacitors for High Frequency Power Supplies
Solid-Electrolyte TANTALEX庐 Capacitors for High Frequency Power Supplies
Solid-Electrolyte TANTALEX垄莽 Capacitors for High Frequency Power Supplies
|
Vishay Siliconix
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| KSC945Y KSC945CG KSC945CL KSC945CO KSC945CR KSC945 |
NPN Epitaxial Silicon Transistor
Audio Frequency Amplifier & High Frequency OSC.
Audio Frequency Amplifier & High Frequency OSC.
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| 2SC3265 |
NPN EPITAXIAL TYPE (LOW FREQUENCY POWER AMPLIFIER, POWER SWITCHING APPLICATIONS)
|
Toshiba Semiconductor
|
|
