| PART |
Description |
Maker |
| BBY51-02L BBY51 BBY51-03W BBY51-02W |
Silicon Tuning Diode
Varactordiodes - Silicon high Q hyperabrupt tuning diode
Varactordiodes - Silicon high Q hyperabrupt dual tuning diode
|
INFINEON[Infineon Technologies AG]
|
| BBY58-02L BBY58-02V BBY58-05W BBY58-06W BBY58-07L4 |
Silicon Tuning Diodes 硅调谐二极管
SHOWCASE CABINET 硅调谐二极管
Varactordiodes - Silicon high Q hyperabrupt tuning diode in ultra small SC79 package
|
INFINEON[Infineon Technologies AG]
|
| BBY57 BBY57-02L BBY57-02V BBY57-05W BBY57-02W |
Varactordiodes - Silicon high Q hyperabrupt tuning diode in ultra small SC79 package
Silicon Tuning Diode
|
INFINEON[Infineon Technologies AG]
|
| 2SC1622 2SC1622A 2SC1622A-T2B 2SC1622A-L 2SC1622A- |
Low-frequency high-gain amplification silicon Tr.
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
|
NEC[NEC]
|
| MC34982PNA MC33982 MC33982PNA MC33982PNA/R2 |
Single Intelligent High-Current Self-Protected Silicon High-Side Switch 单智能大电流的自我保护硅高边开
Single Intelligent High-Current Self-Protected Silicon High-Side Switch (2.0 mOhm)(单智能大电流带自保护功能的硅高端开关（2mOhm
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
飞思卡尔半导体(中国)有限公司
|
| BAS16-02 BAS16-02L BAS16-03 BAS16-07L4 BAS16U BAS1 |
General Purpose Diodes - Silicon Switching Diode for high-speed switching
Latest Silicon Discretes - Switching Diode for high speed switching
Silicon Switching Diode 硅开关二极管
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| ZHCS500 UZHCS500 ZHCS500TA |
DIODE SCHOTTKY SOT-23
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT?/a>
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT”
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SuperBAT
SOT23 SILICON HIGH CURRENT
0.5 A, SILICON, SIGNAL DIODE
High Current Schottky Diode
|
ZETEX[Zetex Semiconductors]
Diodes Incorporated
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| BC638ZL1 BC636-16ZL1 BC640 BC640ZL1 BC636 BC636-16 |
Transistor Silicon Plastic PNP
High Current Transistors PNP Silicon
High Current Transistors(PNP Silicon)
High Current Transistors 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
ONSEMI[ON Semiconductor]
|
| BAS20 BAS19 BAS21 Q62702-A95 Q62702-A113 Q62702-A7 |
Silicon Switching Diodes (High-speed/ high-voltage switch)
From old datasheet system
SILICON SWITCHING DIODES (HIGH-SPEED, HIGH-VOLTAGE SWITCH)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
