| PART |
Description |
Maker |
| RTAN230C RTAN230M RTAN230T2 RTAN230U RTAN230X |
TRANSISTOR WITH RESISTOR FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| RT2N63M |
Composite Transistor For Muting Application Silicon NPN Epitaxial Type
|
Isahaya Electronics Corporation
|
| RT6N230C |
TRANSISTOR WITH RESISTOR FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| RTAN140C RTAN140M RTAN140T2 RTAN140U RTAN140X |
TRANSISTOR WITH RESISTOR FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SC421307 2SC4213 |
Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications
|
Toshiba Semiconductor
|
| 2SC4213 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications
|
TOSHIBA
|
| 2SC523203 2SC5232 |
Transistor Silicon NPN Epitaxial Type (PCT process) General Purpose Amplifier Applications Switching and Muting Switch Application
|
Toshiba Semiconductor
|
| 2SC5233 E007768 |
NPN EPITAXIAL TYPE (GENERAL PURPOSE AMPLIFIER, SWITCHING AND MUTING SWITCH APPLICATIONS)
GENERAL PURPOSE AMPLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION
From old datasheet system
|
Toshiba Semiconductor
|
| KTD1304 |
EPITAXIAL PLANAR NPN TRANSISTOR (AUDIO MUTING)
|
KEC[KEC(Korea Electronics)]
|
| 2SA1955 |
Transistor Silicon PNP Epitaxial Type (PCT process) General Purpose Amplifier Applications Switching and Muting Switch Application
|
TOSHIBA
|
| 2SA1954 |
Transistor Silicon PNP Epitaxial Type (PCT process) General Purpose Amplifier Applications Switching and Muting Switch Application
|
TOSHIBA
|
