| PART |
Description |
Maker |
| D44H10 D45H11 D44H8 D45H8 D44H D45H10 D44H11 ON027 |
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS
Card Edge Connector; No. of Contacts:24; Pitch Spacing:0.156"; Contact Termination:Solder; Leaded Process Compatible:Yes; Mounting Hole Dia:0.128" RoHS Compliant: Yes 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
COMPLEMENTARY SILICON POWER TRANSISTORS 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60/ 80 VOLTS
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 80 VOLTS
From old datasheet system
|
Motorola Inc
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
http://
|
| MJH6287 MJH6284 ON2053 |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
From old datasheet system
20 AMPERE COMPLEMENTARY SILICON
|
ONSEMI[ON Semiconductor]
|
| TIP111 TIP110 TIP117 TIP112 TIP115 TIP116 ON2978 |
DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
Plastic Medium-Power Complementary Silicon Transistors
From old datasheet system
|
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola, Inc]
|
| 2N3055MJ2955 MJ2955 2N3055 ON0038 2N3055_MJ2955 |
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60/ 120 VOLTS 115/ 180 WATTS
15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS 15安培功率晶体管互补性的芯片6015
Complementary SlllconPower Translstors
From old datasheet system
|
ON Semiconductor
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| 2N6488 2N6491 2N6487 2N6490 ON0097 |
15AMPERE COMPLEMENTARY
COMPLEMENTARY SILICON POWER TRANSISTORS
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
| 2N6052 2N6058 |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
12 AMPERE COMPLEMENTARY
|
ON Semiconductor
|
| BD243B ON0193 BD244C BD243C BD244B |
Complementary Silicon Plastic Power Transistors
From old datasheet system
6 AMPERE POWER TRANSISTORS
POWER TRANSISTORS COMPLEMENTARY SILICON
|
Motorola Inc
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| MJF3055 MJF2955 ON2047 |
COMPLEMENTARY SILICON POWER TRANSISTORS
From old datasheet system
COMPLEMENTARY SILICON POWER TRANSISTORS 10 AMPERES 90 VOLTS 30 WATTS
|
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| NTHD3100C NTHD3100CT1 NTHD3100CT1G NTHD3100CT3 NTH |
Power MOSFET Complementary, 20 V, 3.9 A/-4.4 A ChipFET™
Power MOSFET Complementary, 20 V, 3.9 A/-4.4 A ChipFET™; Package: ChipFET™; No of Pins: 8; Container: Tape and Reel; Qty per Container: 3000 2.9 A, 20 V, 0.08 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
Power MOSFET 20V, 3.9A/4.4A, Complementary ChipFET(20V, 3.9A/4.4A功率MOSFET)
Power MOSFET 20 V, 3.9 A /−4.4 A, Complementary ChipFET
|
ON Semiconductor
|
