| PART |
Description |
Maker |
| JANTXV1N827ATR-2 JANS1N827ATR-2 JANTXV1N827TR-2 JA |
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AH
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-213AA
|
Microsemi, Corp.
Microsemi Corporation
|
| 1N822 1N822-1 1N822A 1N824 1N824-1 1N824A 1N821-1 |
Bobbins Transformer; Supply Voltage:230V; Power Rating:2.5VA; Mounting Type:PCB Surface; Approval Bodies:cURus; External Depth:1.375"; External Height:0.813"; External Width:1.125"; Frequency:60GHz; Leaded Process Compatible:Yes
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 6.55 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AH
TRANSF 17VAC .34A FLAT PACK PW 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AH
0TC Reference Voltage Zener 0TC参考电压稳
Cleaning Compound; Dispensing Method:Spray; For Use With:Static Control Mats and Work Surfaces; Volume:1quart (US) RoHS Compliant: NA
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
|
Coilcraft, Inc.
Microsemi, Corp.
TOKO, Inc.
MICROSEMI[Microsemi Corporation]
|
| 1N940B 1N940A 1N935B 1N935A |
9.0 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
|
Digitron Semiconductors
|
| AT45DB041B AT45DB041B-CC AT45DB041B-CI AT45DB041B- |
4M bit, 2.7-Volt Only Serial-Interface Flash with Two 264-Byte SRAM Buffers
4-megabit 2.5-volt Only or 2.7-volt Only DataFlash
|
ATMEL[ATMEL Corporation]
ETC
|
| X28HT010 |
High Temperature, 5 Volt, Byte Alterable E2PROM 128K x 8 Bit
|
Xicor
|
| 1N4767A 1N4771A 1N4770 1N4772A 1N4770A 1N4774 |
9.1 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
9.1 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conduct...
|
| EP20K200CP240I8ES EP20K200CB356I7ES EP20K200CB356I |
256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: -55°C to 125°C; Package: 28-PGA
5V, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 32-PLCC T&R
ASIC 专用集成电路
|
Altera, Corp.
|
| AT29BV040A AT29BV040A-20TC AT29BV040A-20TI AT29BV0 |
4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory
4M bit, 2.7-Volt Read and 2.7-Volt Write Flash
|
ATMEL[ATMEL Corporation]
|
| GE28F320W30B70 GE28F320W30B85 RD28F6408W30T85 28F6 |
Segmented Alphanumeric LED; Display Technology:LED; No. of Digits/Alpha:1; Body Material:GaAsP; LED Color:Red; Leaded Process Compatible:Yes; Luminous Intensity:7.5mcd RoHS Compliant: Yes 2M X 16 FLASH 1.8V PROM, PBGA56
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 2M X 16 FLASH 1.8V PROM, PBGA56
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) SPECIALTY MEMORY CIRCUIT, PBGA80
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 1.8伏英特尔无线闪存伏的I / O和SRAM（宽30
|
Intel, Corp.
Intel Corp.
|
| AM29F016 AM29F016-90 AM29F016-75 AM29F016-75FIB AM |
LM330 3-Terminal Positive Regulator; Package: TO-220; No of Pins: 3; Qty per Container: 45; Container: Rail
16-Megabit097152*8-bit）CMOS 5.0 Volt-only，sector Erase Flash memory
LM32 Dual Thermal Diode Temperature Sensor with SensorPath™ Bus; ; Qty per Container: 1
LM3310 Step-Up PWM DC/DC Converter with Integrated Op-Amp and Gate Pulse Modulation Switch; Package: LLP; No of Pins: 24; Qty per Container: 4500; Container: Reel 16兆位097152 × 8位）CMOS 5.0伏只，扇区擦除闪
16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 120 ns, PDSO44
16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 90 ns, PDSO48
16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 150 ns, PDSO48
16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 120 ns, PDSO48
|
Advanced Micro Devices, Inc.
SPANSION LLC
|
| 1N4007G 1N4004G 1N4001G 1N4002G 1N4002 1N4006 1N40 |
Rectifiers(整流 1 A, 1000 V, SILICON, SIGNAL DIODE
(1N4001G - 1N4007G) Rectifiers(Rugged glass package / using a high temperature alloyed construction)
IC REG VOLT 4.8V 240MA SOT-23
Rectifiers(Rugged glass package/ using a high temperature alloyed construction)
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 50 V, SILICON, SIGNAL DIODE
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 整流器（坚固的玻璃封装，采用高温合金建设
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 400 V, SILICON, SIGNAL DIODE
|
PHILIPS[Philips Semiconductors]
http://
NXP Semiconductors N.V.
|
