| PART |
Description |
Maker |
| CFK2062-P1 CFK2062-P1-000T |
800 to 900 MHz 30 dBm Power GaAs FET
|
Mimix Broadband
|
| CFH2162-P1 |
800 to 900 MHz, 36 dBm, power GaAs FET
|
CELERITEK
|
| MW4IC001NR4 |
800鈥?170 MHz, 900 mW, 28 V W鈥揅DMA RF LDMOS Wideband Integrated Power Amplifier
|
MOTOROLA
|
| AL106-84 |
GAAS IC 900 MHZ HIGH DYNAMIC RANGE AMPLIFIER
|
Skyworks Solutions Inc.
|
| HMC441 HMC440QS16G HMC441LM1 |
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER/ 7.0 - 15.5 GHz
HBT DIGITAL PHASE-FREQUENCY DETECTOR/ 10 - 1300 MHz/ w/ INTEGRATED 5-BIT COUNTER/ 10 - 2800 MHz
800000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.0 - 18.0 GHz
|
美国讯泰微波有限公司上海代表
HITTITE[Hittite Microwave Corporation]
|
| MRFIC2101 |
900 MHz TX-MIXER/EXCITER SILICON MONOLITHIC INTEGRATED CIRCUIT
|
Motorola, Inc
|
| ZAPD-900-5W |
Power Splitter/Combiner 2 Way-0 50楼? 100 to 900 MHz
Power Splitter/Combiner 2 Way-0 50Ω 100 to 900 MHz
|
Mini-Circuits
|
| MAAV-007087-000100 MAAV-007087-0001TB MAAV-007087- |
900 MHz - 2500 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.5 dB INSERTION LOSS-MAX
Voltage Variable Attenuator 900 - 2500 MHz
|
Tyco Electronics
|
| SXL-189-EB |
800-1000 MHz, 50 Ohm power MMIC amplifier. High linearity performance: 42dBm typ. at 900 MHz. Eval board.
|
Stanford Microdevices
|
| MHVIC910HNR2 |
960 MHz, 10 W, 26 V GSM Cellular RF LDMOS Integrated Circuit Documentation
921 MHz-960 MHz SiFET RF Integrated Power Amplifier
|
MOTOROLA
|
| SXL-208-BLK SXL-208-TR1 SXL-208-TR2 |
800-970 MHz, 50 Ohm power MMIC amplifier. High 3rd order intercept: 46dBm typ. at 900 MHz. Devices per reel 100/TRAY.
800-970 MHz, 50 Ohm power MMIC amplifier. High 3rd order intercept: 46dBm typ. at 900 MHz. Devices per reel 500. Reel size 7
800-970 MHz, 50 Ohm power MMIC amplifier. High 3rd order intercept: 46dBm typ. at 900 MHz. Devices per reel 1000. Reel size 13
|
Stanford Microdevices
|
| RF106 |
RF106 900 MHz Power Amplifier
|
Conexant Systems, Inc.
CONEXANT[Conexant Systems Inc]
|
