| PART |
Description |
Maker |
| HB52RD648DC-B HB52RF648DC-B HB52RD648DC-B6BL HB52R |
512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 8 components) PC133/100 SDRAM
512M; 100MHz LVTTL interface SDRAM
512M; 133MHz LVTTL interface SDRAM
|
Elpida Memory
|
| K9F4G08U0M |
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory 512M x 8 1克8位NAND闪存
|
Samsung Semiconductor Co., Ltd.
|
| HX421S13IB-4 |
4GB 512M x 64-Bit DDR4-2133
|
List of Unclassifed Man...
|
| KVR16LE11S8-4KF |
4GB 1Rx8 512M x 72-Bit PC3L-12800
|
List of Unclassifed Man...
|
| KVR16LE11S8-4 |
4GB 1Rx8 512M x 72-Bit PC3L-12800
|
List of Unclassifed Man...
|
| KVR13N9S8-4 |
4GB 1Rx8 512M x 64-Bit PC3-10600
|
List of Unclassifed Man...
|
| TC58NVG2D4BFT00 |
4 GBIT (512M X 8 BIT) CMOS NAND E2PROM
|
Toshiba
|
| KVR16LSE11-4 |
4GB 1Rx8 512M x 72-Bit PC3L-12800
|
List of Unclassifed Man...
|
| MX25R1635F |
Wide Vcc Range, 16M-BIT
|
Macronix International
|
| S34MS16G2 |
16 Gb, 4-Bit ECC, ×8 I/O, and 1.8 V VCC NAND Flash for Embedded
|
Cypress Semiconductor
|
| S34MS01G1 S34MS02G1 S34MS04G1 |
1-bit ECC, x8 and x16 I/O, 1.8V VCC SLC NAND Flash for Embedded
|
Cypress Semiconductor
|
