| PART |
Description |
Maker |
| RA07N4047M RA07N4047M-01 RA07N4047M-E01 |
MITSUBISHI RF MOSFET MODULE 三菱射频MOSFET模块
30V N-Channel PowerTrench MOSFET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| RA13H4047M RA13H4047M-01 RA13H4047M-E01 |
30V N-Channel PowerTrench MOSFET 30V的N沟道的PowerTrench MOSFET
MITSUBISHI RF MOSFET MODULE 400-470MHz 13W 12.5V 2 Stage Amp. For MOBILE RADIO
MITSUBISHI RF MOSFET MODULE 400-470MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
MITSUBISHI RF MOSFET MODULE 400-470MHz 13W 12.5V/ 2 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| PF0027 |
MOS FET Power Amplifier Module
MOSFET Power Ampllfier Module for E-TACS Handy Phone
|
Renesas Technology
Hitachi Semiconductor
|
| APT58M50JU3 |
ISOTOP? Buck chopper MOSFET Power Module
ISOTOP垄莽 Buck chopper MOSFET Power Module
|
Microsemi Corporation
|
| DE375-301N40-00 DE150-102N02-00 |
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 300V V(BR)DSS | 40A I(D) 晶体管| MOSFET功率模块|独立| 300V五（巴西）直| 40A条（丁）
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 1KV V(BR)DSS | 2A I(D) 晶体管| MOSFET功率模块|独立| 1KV交五（巴西）直|甲（丁）
|
EPCOS AG
Electronic Theatre Controls, Inc.
|
| APT20M22JVRU3 |
97 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET
ISOTOP Buck chopper MOSFET Power Module
|
Microsemi Corporation
|
| APTC80A15SCTG |
Phase leg Serie & SiC parallel diodes Super Junction MOSFET Power Module 28 A, 800 V, 0.15 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Phase leg Serie & SiC parallel diodes Super Junction MOSFET Power Module
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| APTM50AM24SCG |
150 A, 500 V, 0.028 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Phase leg Series & SiC parallel diodes MOSFET Power Module
|
Microsemi Corporation
|
| APTM10TDUM09PG |
Triple dual common source MOSFET Power Module 139 A, 100 V, 0.01 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| APTM100TDU35PG |
Triple dual common source MOSFET Power Module 22 A, 1000 V, 0.42 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| IXGE75N100Z IXGE50N90Z IXTE9N65X4U IXGE50N50Z |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 75A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 900V V(BR)CES | 50A I(C)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 650V V(BR)DSS | 9A I(D) 晶体管| MOSFET功率模块|独立|650V五（巴西）直| 9A条（丁）
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 500V V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|独立| 500V五（巴西）国际消费电子展| 50A条一（c
|
IXYS, Corp.
|
