Part Number Hot Search : 
RT1401B STF70111 FN2268 MC035 BT827B MMBT2 AITD270 MHW1304L
Product Description
Full Text Search

LET20030C - RF POWER TRANSISTORS Ldmos Enhanced Technology RF功率晶体管LDMOS的增强技

LET20030C_161465.PDF Datasheet


 Full text search : RF POWER TRANSISTORS Ldmos Enhanced Technology RF功率晶体管LDMOS的增强技
 Product Description search : RF POWER TRANSISTORS Ldmos Enhanced Technology RF功率晶体管LDMOS的增强技


 Related Part Number
PART Description Maker
LET19060C RF POWER TRANSISTORS Ldmos Enhanced Technology RF功率晶体管LDMOS的增强技
RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
AFT21H350W03SR6 RF Power LDMOS Transistors
NXP Semiconductors
GRM21BR71H104KA01B GRM21BR71H105KA12L 2508051107Y0 RF Power LDMOS Transistors
Freescale Semiconductor, Inc
Freescale Semiconductor...
LET9006 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
STMicroelectronics
PTFB183404E PTFB183404F High Power RF LDMOS Field Effect Transistors 340 W, 1805 ?1880 MHz
Infineon Technologies AG
MRFE6VP61K25GSR5 MRFE6VP61K25HR6 MRFE6VP61K25HR5 M RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
   RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
Freescale Semiconductor, Inc
Freescale Semiconductor...
BLF7G22LS-100P Power LDMOS transistor
100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
NXP Semiconductors N.V.
MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1 GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers
RF LDMOS Wideband Integrated Power Amplifiers
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
1011LD300 RF Power Transistors: AVIONICS
300 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET
ADPOW[Advanced Power Technology]
0805 1008 T491X226K035AS 100B100JCA500X 100B120JP5 RF LDMOS Wideband Integrated Power Amplifiers
MW4IC001MR4 W-CDMA 0.8-2.17 GHz, 900 mW, 28 V RF LDMOS Wideband Integrated Power Amplifier
Freescale Semiconductor, In...
FREESCALE[Freescale Semiconductor, Inc]
Motorola
BLF6G22L-40BN 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor
NXP Semiconductors N.V.
 
 Related keyword From Full Text Search System
LET20030C 中文 LET20030C Iconline LET20030C image sensor LET20030C module LET20030C size
LET20030C Source LET20030C analog devices LET20030C package LET20030C Data LET20030C specifications
 

 

Price & Availability of LET20030C

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.35671281814575