| PART |
Description |
Maker |
| GBU6J GBU6J-BP GBU6A-BP GBU6D-BP GBU6M-BP GBU6B-BP |
6 Amp Single Phase Glass Passivated Bridge Rectifier 50 to 1000 Volts RECT BRIDGE GPP 6A 600V GBU 6 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE RECT BRIDGE GPP 6A 800V GBU 6 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
|
Micro Commercial Compon... 天津环球磁卡股份有限公司 Micro Commercial Components, Corp.
|
| GS2M GS2B GS2A GS2D GS2G GS2J GS2K |
2.0 Amp Silicon Rect.0 Amp Silicon Rectifier 50 to 1000 Voltsifier 50 to 1000 OLTS
|
MCC[Micro Commercial Components]
|
| FVG72-156Z |
Silicon-wafer Polycrystalline photovoltaic module with power peak from 275 W to 290 W
|
List of Unclassifed Manufacturers List of Unclassifed Man...
|
| 1N2504SERIES |
250 am avg POWER SILICON RECTIFIER DIODES
|
International Rectifier
|
| NTE5864 NTE5889 NTE5865 |
Silicon power rectifier diode. Anode to case. Peak reverse voltage 200V. Max forward current 30A. Silicon Power Rectifier Diode, 25 Amp Silicon Power Rectifier Diode 25 Amp Silicon Power Rectifier Diode / 25 Amp
|
NTE[NTE Electronics]
|
| GBJ1500511 GBJ1510-BP |
15 Amp Glass Passivated Bridge Rectifier 50 to 1000 Volts RECT BRIDGE GPP 15A 1000V GBJ 15 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
|
Micro Commercial Components, Corp.
|
| MC5619 |
FAST RECOVERY HIGH POWER MICRO HIGH VOLTAGE RECTIFIERS 0.275 A, SILICON, SIGNAL DIODE
|
Microsemi, Corp.
|
| 1N3087 1N3111SERIES 1N5162SERIES 1N5162 1N3111 1N3 |
150AMP AVG SILICON RECTIFIER DIODES 150AMP AVG的一般整流二极管 150am avg POWER SILICON RECTIFIER DIODES 600V 150A Std. Recovery Diode in a DO-205AC (DO-30)package 100V 150A Std. Recovery Diode in a DO-205AC (DO-30)package 200V 150A Std. Recovery Diode in a DO-205AC (DO-30)package 300V 150A Std. Recovery Diode in a DO-205AC (DO-30)package 400V 150A Std. Recovery Diode in a DO-205AC (DO-30)package 500V 150A Std. Recovery Diode in a DO-205AC (DO-30)package 800V 150A Std. Recovery Diode in a DO-205AC (DO-30)package 1000V 150A Std. Recovery Diode in a DO-205AC (DO-30)package 50V 150A Std. Recovery Diode in a DO-205AC (DO-30)package 150AMP AVG SILICON RECTIFIER DIODES
|
International Rectifier, Corp. IRF[International Rectifier]
|
| MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3 |
MRF5S21100HR3, MRF5S21100HSR3 2170 MHz, 23 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs 2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
| MRF5S19100L MRF5S19100LR3 MRF5S19100LSR3 |
MRF5S19100LR3, MRF5S19100LSR3 1990 MHz, 22 W Avg., 2 x N-CDMA, 28 V Lateral N-Channel RF Power MOSFETs 1990 MHz, 22 W Avg., 2 x N–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
| MRF5P21240R6 MRF5P21240 |
RF POWER FIELD EFFECT TRANSISTOR 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET MRF5P21240R6 2170 MHz, 52 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET 2170 MHz, 52 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] Freescale (Motorola)
|
| PSM275-909 |
275-Watt Power-Over-Ethernet Power Supply
|
Phihong USA Inc.
|