| PART |
Description |
Maker |
| M29F040B45K1T M29F040B55K1T M29F040B70K1T M29F040B |
4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory 4兆位12KB的8，统一座）单电源闪
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| M27C400 6674 M27C400-80XF6TR M27C400-100B1TR M27C4 |
AML42 Series, Solid State Indicator, Square, Compact Style, Lighted, 1 LED, Snap in panel mount 4兆位512KB的x856Kb的x16紫外线存储器和OTP存储
4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16紫外线存储器和OTP存储
4 Mbit (512Kb x8 or 256Kb x16) UV EPROM and OTP EPROM
From old datasheet system
|
Advanced Micro Devices, Inc.
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M27W800-150K6TR M27W800 M27W800-100B6TR M27W800-10 |
8 Mbit (1Mb x 8 or 512Kb x 16), Low Voltage UV EPROM and OTP EPROM
8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM 8兆8512KB × 16低压紫外线存储器和OTP存储
81兆812KB × 16低压紫外线存储器和OTP存储
8 MBIT (1MB X 8 OR 512KB X 16) LOW VOLTAGE UV EPROM AND OTP EPROM
512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| ST16CF54LEVELB |
4Mbit (512Kb x8, Uniform Block) Low Voltage Single Supply Flash Memory(4M位低压单电源闪速存储器)
|
意法半导
|
| M36W0R6030T0ZAQ M36W0R6030B0ZAQ M36W0R6030B0 M36W0 |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
|
http://
STMicroelectronics
|
| M29F032D M29F032D70 7946 M29F032D70N1 M29F032D70N1 |
32 MBIT (4MB X8, UNIFORM BLOCK) 5V SUPPLY FLASH MEMORY
32 Mbit 4Mb x8 / Uniform Block 5V Supply Flash Memory
32 MBIT (4MB X8, UNIFORM BLOCK) 5V SUPPLY FLASH MEMORY
32 Mbit 4Mb x8 Uniform Block 5V Supply Flash Memory
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M27W401 M27W401-100B6TR M27W401-100F6TR M27W401-10 |
4 Mbit (512Kb x 8) Low Voltage UV EPROM and OTP EPROM
Quadruple 1-of-2 Data Selectors/Multiplexers 16-SOIC 0 to 70 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储
4 Mbit 512Kb x 8 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储
Quadruple 1-of-2 Data Selectors/Multiplexers 16-PDIP 0 to 70 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储
Quadruple 1-of-2 Data Selectors/Multiplexers 16-SO 0 to 70 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储
4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M48Z512AY M48Z512A |
4 Mbit (512Kb x8) ZEROPOWER ? SRAM
|
STMicro
|
| M48Z512AY-85PM9 |
4 MBIT (512KB X 8) ZEROPOWER SRAM
|
ST Microelectronics
|
| W25X20LSNCG W25X20VSNI W25X10LDACG W25X20VZPIZ |
4 Mbit Uniform Sector, Serial Flash Memory 2M X 1 FLASH 2.7V PROM, PDSO8
4 Mbit Uniform Sector, Serial Flash Memory 1M X 1 FLASH 2.7V PROM, PDIP8
4 Mbit Uniform Sector, Serial Flash Memory 2M X 1 FLASH 2.7V PROM, DSO8
|
Winbond Electronics, Corp.
|
| M36W832TE70ZA1T M36W832TE85ZA1T M36W832TE-ZAT M36W |
SPECIALTY MEMORY CIRCUIT, PBGA66
32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
|
SGS Thomson Microelectronics
NUMONYX
意法半导
ST Microelectronics
|
| M36W832TE8 M36W832TE M36W832BE70ZA6T M36W832BE70ZA |
32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
32 Mbit 2Mb x16 Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
|
