| PART |
Description |
Maker |
| BR24L04FJ-W BR24L04FVM-W BR24L04FV-W BR24L04F-W BR |
512】8 bit electrically erasable PROM
5128 bit electrically erasable PROM
|
ROHM[Rohm]
|
| IM5603 IM5623 |
ELECTRICALLY PROGRAMMABLE 1024 BIT BIPOLAR READ ONLY MEMORY 1024位电可编程只读存储器双极
(IM5603 / IM5623) ELECTRICALLY PROGRAMMABLE 1024 BIT BIPOLAR READ ONLY MEMORY
|
Intersil, Corp.
Intersil Corporation
|
| IS25C02 IS25C04 |
(IS25C02 / IS25C04) 2K-BIT/4K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM
|
ISSI
|
| 24AA01T 24LC01T-I_STG 24AA01 24AA01-E_MSG 24AA01-E |
The 24LC01B is a 1K bit Electrically Erasable PROM memory organized as a single block of 128 x 8-bit memory with an I2C™ compatible ...
The 24LC01B is a 1K bit Electrically Erasable PROM memory organized as a single block of 128 x 8-bit memory with an I2C™ compatible 2-wire serial interface bus. The 24LC01B features hardware write protect, Schmitt trigger inputs, 400
1K I2C Serial EEPROM
1K/2K I2CSerial EEPROMs in ISO Micromodules
|
MICROCHIP[Microchip Technology]
|
| ISPLSI2128A-100LQ160 ISPLSI2128A-80LT176 ISPLSI212 |
Electrically-Erasable Complex PLD
Electrically-ErasableComplexPLD
|
|
| BR24L08-W BR24L08F-W BR24L08FJ-W BR24L08FV-W BR24L |
1024×8 bit electrically erasable PROM
1024 bit electrically erasable PROM 1024位电可擦除可编程ROM
|
Rohm Co., Ltd.
Rohm CO.,LTD.
|
| BR24L01A-W BR24L01AFJ-W BR24L01AFV-W BR24L01AFVM-W |
128×8 bit electrically erasable PROM
128 bit electrically erasable PROM 128位电可擦除可编程ROM
|
Rohm Co., Ltd.
Rohm CO.,LTD.
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
| XL93LC56 XL93LC56A |
2048-Bit Serial Electrically EPROM
|
EXEL
|
| BR24L04FVM-W BR24L04-W |
512×8 bit electrically erasable PROM
|
Rohm
|
