| PART |
Description |
Maker |
| BGY136 BGY135 |
VHF power amplifier modules
|
NXP Semiconductors
Philips Semiconductors
|
| LMP2003 |
VHF Silicon MOSFET Power Amplifier Module(5.5W ,7.2V,220MHz-222MHz)(VHF MOSFET功率放大器模输出功率:5.5W,电压:7.2V,220MHz-222MHz))
|
Semelab(Magnatec)
|
| TBB1010KMTL-H TBB101011 |
Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
|
Renesas Electronics Corporation
|
| HN3C01FU |
NPN EPITAXIAL PLANAR TYPE (TV TUNERM VHF CONVERTER, TV VHF RF AMPLIFIER APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| MS1329 |
RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 60; P(in) (W): 12; Gain (dB): 7; Vcc (V): 28; Cob (pF): 80; Case Style: M135 VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
Microsemi, Corp.
|
| 3SK260 E001714 |
N CHANNEL DUAL GATE MOS TYPE (TV TUNER VHF MIXER,VHF RF AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba Semiconductor
|
| S-AV33A |
RF POWER AMPLIFIER MODULE FM RF POWER AMPLIFIER MODULE FOR 32W COMMERCIAL VHF RADIO APPLICATIONS
|
Toshiba Semiconductor
|
| BGY43 |
VHF power amplifier module
|
NXP Semiconductors
Philips Semiconductors
|
| S-AV37A |
RF POWER AMPLIFIER MODULE FM RF POWER AMPLIFIER MODULE FOR 32-W COMMERCIAL VHF RADIO APPLICATIONS
|
Toshiba Semiconductor
|
| MS1506 |
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 40; P(in) (W): 5; Gain (dB): 9; Vcc (V): 13.6; Cob (pF): 95; fO (MHz): 0; Case Style: M135 VHF BAND, Si, NPN, RF POWER TRANSISTOR
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| MS1337 |
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 30; P(in) (W): 3; Gain (dB): 10; Vcc (V): 12.5; Cob (pF): 120; fO (MHz): 0; Case Style: M113 VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
