| PART |
Description |
Maker |
| A43L0616BV A43L0616B A43L0616BV-6 A43L0616BV-6F A4 |
512K X 16 Bit X 2 Banks Synchronous DRAM
|
AMIC Technology
|
| M12L64322A-6BIG M12L64322A-6TIG |
512K x 32 Bit x 4 Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| IC42S16101-6T |
512K x 16 Bit x 2 Banks (16-MBIT) SDRAM
|
Integrated Circuit Solu...
|
| A43L0616AV-55 A43L0616AV-7 A43L0616AV-7U A43L0616A |
512K X 16 Bit X 2 Banks Synchronous DRAM
|
http://
AMIC Technology Corporation
|
| M12S64322A-6BG M12S64322A-6TG M12S64322A-7BG M12S6 |
512K x 32 Bit x 4 Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| A43E06321 |
512K X 32 Bit X 2 Banks Low Power Synchronous DRAM
|
AMICC
|
| IC42S16102-6T IC42S16102-7T IC42S16102-7TI |
512K x 16 Bit x 2 Banks (16-MBIT) SDRAM 12k × 16位2银行6兆）内存
|
Rohm Co., Ltd.
Advanced Interconnections, Corp.
|
| IC42S16101-6T IC42S16101-6TI IC42S16101-7TG IC42S1 |
512K x 16 Bit x 2 Banks (16-MBIT) SDRAM 12k × 16位2银行6兆）内存
|
Rohm Co., Ltd.
Electronic Theatre Controls, Inc.
Atmel, Corp.
|
| HY57V161610D-I HY57V161610DTC-10I HY57V161610DTC-7 |
SDRAM - 16Mb
2 Banks x 512K x 16 Bit Synchronous DRAM
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
|
| K4R881869 K4R881869M-NCK8 K4R881869M-NBCCG6 |
288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz
64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IC42S32202 IC42S32202L IC42S32202L-6BG IC42S32202L |
512K x 32 Bit x 4 Banks (64-MBIT) SDRAM
From old datasheet system
DYNAMIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
