| PART |
Description |
Maker |
| BUZ32 BUZ32SMD |
Low Voltage MOSFETs - Power MOSFET, 200V, DPAK, RDSon=0.4 Ohm, 9.5A, NL
Low Voltage MOSFETs - Power MOSFET, 200V, TO-220, RDSon=0.4 Ohm, 9.5A, NL
SIPMOS Power Transistor
|
INFINEON[Infineon Technologies AG]
|
| BUZ31 |
Low Voltage MOSFETs - Power MOSFET, 200V, TO-220, RDSon=0.2 Ohm, 14.5A, NL
SIPMOS Power Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPU30P06P SPD30P06P |
Low Voltage MOSFETs - Power MOSFET, -60V, I-PAK, RDSon = 75m
SIPMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPB80P06P SPP80P06P |
SIPMOS Power-Transistor SIPMOS功率晶体
Low Voltage MOSFETs - Power MOSFET, -60V, TO-220, RDSon = 23m
|
INFINEON[Infineon Technologies AG]
|
| SPI47N10L SPP47N10L SPB47N10L |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=26mOhm, 47A, LL
SIPMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| BUZ344 |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-218, RDSon=0.035 Ohm, 50A, NL
SIPMOS Power Transistor
|
INFINEON[Infineon Technologies AG]
|
| BSO350N03 |
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 30V, SO8, RDSon = 35mOhm, 6.0A, LL, dual
OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| IPU07N03LA |
OptiMOS®2 - Power packages
OptiMOS2 Power MOSFET. 25V. TO251. RDSon = 6.5mOhm. 30A. LL ？的OptiMOS功率MOSFET25V的TO251。导通状态\u003d 6.5mOhm30A条。当地雇员？
|
Infineon
Toshiba, Corp.
|
| IPI03N03LA IPP03N03LA IPB03N03LA |
OptiMOS®2 - Power packages
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 25V, TO220, RDSon = 3.0mOhm, 80A, LL
OptiMOS 2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| BUZ345 BUZ345C67078-S3121-A2 |
Single-chip ZigBee® 802.15.4 solution
SIPMOS Power Transistor
Low Voltage MOSFETs - Power MOSFET, 100V, TO-218, RDSon=0.045 Ohm, 41A, NL
|
INFINEON[Infineon Technologies AG]
|
| SPU30N03S2-08 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, IPAK, RDSon = 8.2mOhm, 30A, NL
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
