| PART |
Description |
Maker |
| RMPA1959 |
3.4V PCS CDMA PA Module
PCS 3.4V CDMA & CDMA2000-1X PowerEdge Power Amplifier Module 1850 MHz - 1910 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
PCS 3.4V CDMA & CDMA2000-1X PowerEdge Power Amplifier Module
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
|
| YD7377 |
2 x 30W DUAL/QUAD POWER AMPLIFIER
|
ETC
|
| S-AV40 |
RF POWER AMPLIFIER MODULE FM RF POWER AMPLIFIER MODULE FOR 30W COMMERCIAL VHF RADIO APPLICATIONS
|
Toshiba Semiconductor
|
| TA8233AH |
30W BTL x 2CH AUDIO POWER AMPLIFIER
|
Toshiba Semiconductor
|
| TA8220HQ |
30W BTL × 2ch Audio Power Amplifier
30W BTL 】 2ch Audio Power Amplifier
|
Toshiba Semiconductor
|
| TA8233BHQ06 TA8233BHQ |
30W BTL × 2ch Audio Power Amplifier
30W BTL ? 2ch Audio Power Amplifier
30W BTL 】 2ch Audio Power Amplifier
|
Toshiba Semiconductor
|
| TA8233BH |
30W BTL X 2ch Audio Power Amplifier
|
Toshiba Semiconductor
|
| TA8221ALQ TA8221AHQ |
30W BTL X 2Ch Audio Power Amplifier
|
Toshiba
|
| TDA7377 TDA7377L-J15-D-T TDA7377G-J15-D-T |
2 x 30W DUAL/QUAD POWER AMPLIFIER FOR CAR RADIO
|
Unisonic Technologies
|
| RF2146 RF2146PCBA |
PCS LINEAR POWER AMPLIFIER
|
RFMD[RF Micro Devices]
|
| TA8221AL TA8221AH E003752 TA8221 |
30W BTL x 2CH AUDIO POWER AMPLIFIER
From old datasheet system
|
Toshiba Corporation
Toshiba Semiconductor
|
| 2SD313 |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 40 @ Ic = 2A. Pd = 30W.
|
USHA India LTD
|
