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HCF4001BEY - RF Bipolar Transistor; Collector Emitter Voltage, Vceo:3V; Transistor Polarity:Dual P Channel; Power Dissipation:150W; C-E Breakdown Voltage:200V; DC Current Gain Min (hfe):35; Collector Current:15A; DC Current Gain Max (hfe):160 QUAD 2-INPUT NOR GATE

HCF4001BEY_132431.PDF Datasheet

 
Part No. HCF4001BEY HCF4001BM1 HCF4001M013TR HCF4001B
Description RF Bipolar Transistor; Collector Emitter Voltage, Vceo:3V; Transistor Polarity:Dual P Channel; Power Dissipation:150W; C-E Breakdown Voltage:200V; DC Current Gain Min (hfe):35; Collector Current:15A; DC Current Gain Max (hfe):160
QUAD 2-INPUT NOR GATE

File Size 108.88K  /  8 Page  

Maker


意法半导
STMICROELECTRONICS[STMicroelectronics]



JITONG TECHNOLOGY
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Part: HCF4001BEY
Maker: ST
Pack: 管装/盘装
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    50: $0.06
  100: $0.05
1000: $0.05

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 Full text search : RF Bipolar Transistor; Collector Emitter Voltage, Vceo:3V; Transistor Polarity:Dual P Channel; Power Dissipation:150W; C-E Breakdown Voltage:200V; DC Current Gain Min (hfe):35; Collector Current:15A; DC Current Gain Max (hfe):160 QUAD 2-INPUT NOR GATE
 Product Description search : RF Bipolar Transistor; Collector Emitter Voltage, Vceo:3V; Transistor Polarity:Dual P Channel; Power Dissipation:150W; C-E Breakdown Voltage:200V; DC Current Gain Min (hfe):35; Collector Current:15A; DC Current Gain Max (hfe):160 QUAD 2-INPUT NOR GATE


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