| PART |
Description |
Maker |
| NN5118160 NN5118160A NN5118160AJ-60 NN5118160AJ-70 |
CMOS 1M x 16BIT DYNAMIC RAM
|
N.A.
ETC[ETC]
|
| K4F171612D |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode 100万16的CMOS动态随机存储器的快速页面模
|
Samsung Semiconductor Co., Ltd.
|
| K4E661612EK4E641612E |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet
|
Samsung Electronic
|
| KM416V4000C |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode(4M x 16CMOS动态RAM(带快速页模式)) 4米16位的快速页面模式的CMOS动态RAM4米16位的CMOS动态随机存储器（带快速页模式））
|
Samsung Semiconductor Co., Ltd.
|
| GM71C17400 GM71C17400CJ GM71CS17400CL GM71C17400CL |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns
4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
x4 Fast Page Mode DRAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24
4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M
IC REG LDO 1A 12V SHDN TO220FP-5
null4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM
null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 50ns
4,194,304 words x 4 bit CMOS dynamic RAM, 70ns
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| K4F151611 K4F151611D K4F151612D K4F171611D K4F1716 |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle.
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle.
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4E661612C-TC K4E641612C-TC50 K4E641612C-TC60 K4E6 |
CABLE ASSEMBLY; SMA MALE TO SMA FEMALE BULKHEAD; 50 OHM, RG58C/U COAX; 36" CABLE LENGTH;
4M x 16bit CMOS Dynamic RAM with Extended Data Out 4米16位的CMOS动态随机存储器的扩展数据输
|
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM48V8104C KM48V8004C KM48V8104CK-45 KM48V8104CKL- |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| VG26VS17400FJ VG26S17400FJ-6 VG26V17400FJ-6 VG26V1 |
4,194,304 x 4 - Bit CMOS Dynamic RAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24
4/194/304 x 4 - Bit CMOS Dynamic RAM
|
Vanguard International ...
Vanguard International Semiconductor, Corp.
|
