| PART |
Description |
Maker |
| BZW06-10 BZW06-102 BZW06-102B BZW06-10B BZW06-128 |
TRANSIL Diode for High Overvoltage Protection(400W???浜???靛?淇????RANSIL浜??绠????)) TRANSIL Diode for High Overvoltage Protection(400W、用于过电压保护的TRANSIL二极单向)) TRANSIL二极管(400W,用于过电压保护的TRANSIL二极管(单向),高过电压保护 TRANSIL Diode for High Overvoltage Protection(600W、用于过电压保护的TRANSIL二极双向)) TRANSIL二极管(600W,用于过电压保护的TRANSIL二极管(双向),高过电压保护 2 A step-down switching regulator 3 V FIPS-140 security supervisor with battery switchover Complete DDR2/3 memory power supplies controller TRANSIL Diode for High Overvoltage Protection(600W、用于过电压保护的TRANSIL二极单向)) () TRANSILTM TRANSIL TM Unidirectional and bidirectional Transient Voltage Suppressor Diodes
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STMicroelectronics N.V. 意法半导 ST Microelectronics Diotec Elektronische SGS Thomson Microelectronics
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| SLE4436SE SLE4436 SLE4436C SLE4436E SLE4436EC SLE4 |
Intelligent 221-Bit EEPROM Counter For 20000 Units With Security Logic And High Security Authentication(智能21位EEPROM计数可计20000单元,带安全逻辑,高级安全认证)) 智能221位EEPROM的柜台,20000安全逻辑,高安全性认证(智能21位EEPROM的计数器(可20000单元,带安全逻辑,高级安全认证)单位 Intelligent 221Bit EEPROM Counter Security & Chip Card ICs From old datasheet system
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SIEMENS AG INFINEON[Infineon Technologies AG]
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| SF0140BA03069S |
140 MHz SAW Filter 7 MHz Bandwidth From old datasheet system 140 MHz Low Loss SAW Filters
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Integrated Circuit Systems ICS
|
| AT88SA10HS |
CryptoAuthentication Host Security Chip CryptoAuthentication垄芒 Host Security Chip
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ATMEL Corporation
|
| SLE66C320S-T85-C SLE66C320S-V5-C SLE66C320SC SLE66 |
Security & Chip Card ICs SLE 66C320S 安全 Security & Chip Card ICs SLE 66C320S 16-bit Security Controller with 32-Kbyte ROM, 1280 Byte RAM and 32-Kbyte EEPROM(16位安全控制器(B>32-KB ROM,1280B RAM, 32KB EEPROM)) 16-bit Security Controller with 32-Kbyte ROM, 1280 Byte RAM and 32-Kbyte EEPROM(16位安全控制器(32-KB ROM,1280B RAM, 32KB EEPROM)) 16位安全控制器32字节ROM280字节RAM32字节的EEPROM6位安全控制器(带32 - KB的光盘,1280B的RAM32KB的EEPROM的)
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INFINEON[Infineon Technologies AG] SIEMENS AG
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| SFT2014/3 SFT2012/3 |
200 AMP 100-140 VOLTS NPN TRANSISTOR 200 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-3
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Solid States Devices, Inc. Solid State Devices, Inc.
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| STP25NM60N STB25NM60N STB25NM60N-1 STF25NM60N STW2 |
From old datasheet system N-CHANNEL Power MOSFET N-CHANNEL 600V 0.140-20A TO-220/FP/DAK/TO-247 SECOND GENERATION MDmesh MOSFET N沟道600V.140 - 20A型TO-220/FP/DAK/TO-247 MOSFET的第二代MDmesh
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http:// STMICROELECTRONICS[STMicroelectronics] ST Microelectronics 意法半导 STMicroelectronics N.V.
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| MAX6720 MAX6720UTD-T MAX6729 MAX6717 MAX6722UTD-T |
Vcc1: 2.313 V, Vcc2: 1.110 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 1.665 V, Vcc2: 1.388 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 2.313 V, Vcc2: 1.388 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 2.188 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 2.313 V, Vcc2: 1.665 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Dual/Triple Ultra-Low-Voltage SOT23 μP Supervisory Circuits Dual/Triple Ultra-Low-Voltage SOT23 P Supervisory Circuits Replaced by TPL9201 : Microcontroller Power Supply and Low-Side Driver 20-PDIP -40 to 125 Dual/Triple Ultra-Low-Voltage SOT23 レP Supervisory Circuits 三路、超低电压、SOT23封装、微处理器监控电 8-Bit Shift Register 16-PDIP -40 to 125 三路、超低电压、SOT23封装、微处理器监控电 Vcc1: 2.188 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 4.625 V,Vcc2: 3.075 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 4.375 V, Vcc2: 2.625 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 2.625 V, Vcc2: 2.188 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 2.925 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 2.925 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 2.925 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 2.925 V, Vcc2: 2.188 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 3.075 V, Vcc2: 0.833 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 3.075 V, Vcc2: 1.388 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 3.075 V, Vcc2: 1.665 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 3.075 V, Vcc2: 2.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 1.575 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 1.575 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 1.575 V, Vcc2: 1.050 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1: 1.665 V, Vcc2: 0.883 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit Vcc1 4.625 V,Vcc2 3.075 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
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MAXIM[Maxim Integrated Products] Maxim Integrated Products, Inc. Maxim Integrated Produc... MAXIM - Dallas Semiconductor
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| HMS88T1232 HMS88T1264 |
Turbo 80C52 Core Based High Security SmartcardController With 32K Bytes EEPROM Turbo 80C52 Core Based High Security Smartcard Controller With 64K Bytes EEPROM
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http:// ETC[ETC]
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| SLE55R16LM SLE55R16 SLE55R16C INFINEONTECHNOLOGIES |
Security & Chip Card ICs 安全 Security & Chip Card ICs
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INFINEON[Infineon Technologies AG] http://
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