| PART |
Description |
Maker |
| 2SB1008 |
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 2A I(C) | TO-126
Low Freq. Power Amp. Epitaxial Planar PNP Silicon Darlington Transistor
|
Rohm CO.,LTD.
ROHM Electronics
|
| 2N5038 JAN2N5039 JANTXV2N5039 2N5039 JAN2N5038 JAN |
NPN HIGH POWER SILICON TRANSISTOR 20 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-204AA
NPN HIGH POWER SILICON TRANSISTOR 2 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-3
From old datasheet system
(JAN2N5038 / JAN2N5039) NPN HIGH POWER SILICON TRANSISTOR
NPN Transistor
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| 2SC5379 |
Small-signal device - Small-signal transistor - High-Speed SwitchVCO and High Freq.
|
Panasonic
|
| 2SA1806J |
Small-signal device - Small-signal transistor - High-Speed SwitchVCO and High Freq.
|
Panasonic
|
| 2SC5829 |
Small-signal device - Small-signal transistor - High-Speed SwitchVCO and High Freq.
|
Panasonic
|
| 2SA1806 |
Small-signal device - Small-signal transistor - High-Speed SwitchVCO and High Freq.
|
Panasonic
|
| 2SA1463-T2 2SA1463-T1 2SA1463 |
Silicon transistor
HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
|
NEC
|
| 2SA1647-Z 2SA1647-15 |
SILICON POWER TRANSISTOR
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
|
Renesas Electronics Corporation
|
| 2SA1845 |
Silicon power transistor
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
|
NEC
|
| 2SC5177 2SC5177-T1 2SC5177-T2 |
High fT, high gain transistor
NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
|
NEC
|
| 2SC2517 |
Silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
|
NEC Corp.
|
| 2SA1610 2SA1610-T1 |
Silicon transistor
HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR
|
NEC[NEC]
|
