| PART |
Description |
Maker |
| GS88018BT-133 GS88018BT-133I GS88018BT-150 GS88018 |
133MHz 8.5ns 512K x 18 9Mb sync burst SRAM
150MHz 7.5ns 512K x 18 9Mb sync burst SRAM
166MHz 7ns 512K x 18 9Mb sync burst SRAM
200MHz 6.5ns 512K x 18 9Mb sync burst SRAM
225MHz 6ns 512K x 18 9Mb sync burst SRAM
250MHz 5.5ns 512K x 18 9Mb sync burst SRAM
|
GSI Technology
|
| UPD42S16100LLA-A80 UPD42S16100LG3-A80-7JD UPD42S17 |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
9-Mbit (256K x 32) Pipelined DCD Sync SRAM
9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
x1 Fast Page Mode DRAM x1快速页面模式的DRAM
|
TOKO, Inc.
EPCOS AG
|
| P4C1049L-70L36MB P4C1049-45JMB P4C1049-55JMB P4C10 |
HIGH SPEED 512K x 8 STATIC CMOS RAM 高速为512k × 8静态CMOS存储
HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 25 ns, PDFP36
HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 20 ns, PDFP36
HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 35 ns, PDFP36
HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 35 ns, CDSO36
HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 35 ns, PDSO36
HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO36
HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 25 ns, CDSO36
HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 70 ns, CDSO36
HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 45 ns, PDFP36
HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 70 ns, PDFP36
|
Pyramid Semiconductor Corporation
Pyramid Semiconductor, Corp.
|
| GS832218B-133 GS832218B-133I GS832218B-150 GS83221 |
64K 3.3 VOLT SERIAL CONFIGURATION PROM 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
GIGABASE 350 CAT5E PATCH 1 FT, SNAGLESS, WHITE 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万18100万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36，为512k × 72分配36MBS /双氰胺同步突发静态存储器
DIODE, ZENER, 4.3V, 0.5W, 5%, -65-175C, DO-35
(GS832218 / GS832236 / GS832272) S/DCD Sync Burst SRAMs
|
ETC
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| GS8160V36CGT-300 |
1M x 18 and 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 5 ns, PQFP100
|
GSI Technology, Inc.
|
| GS816136CD-300IT |
1M x 18 and 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 5 ns, PBGA165
|
GSI Technology, Inc.
|
| GS8160EV18AT-150I GS8160EV18AT-250I GS8160EV18AT-3 |
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS816118 |
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
|
List of Unclassifed Manufacturers
|
| GS816118BD-200IV GS816136BD-200IV GS816118BGT-150I |
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 6.5 ns, PBGA165
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 6.5 ns, PBGA165
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 7.5 ns, PQFP100
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 7.5 ns, PBGA165
|
GSI Technology, Inc.
|
|
