| PART |
Description |
Maker |
| GA1A4M GA1A4M-T1 GA1A4M-T2 |
Hybrid transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR
|
NEC[NEC]
|
| GA1A4P GA1A4P-T1 GA1A4P-T2 |
Hybrid transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR
|
NEC
|
| GA1F4Z GA1F4ZL65 GA1F4ZL64 GA1F4Z-T2 |
Hybrid transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-323 晶体管| 50V五（巴西）总裁| 100mA的一（c）|的SOT - 323
|
NEC[NEC]
NEC Corp.
NEC, Corp.
|
| 2SA2091S 2SA2091STPQ |
1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR SPT, SC-72, 3 PIN
Medium power transistor (60V/ 1A)
Medium power transistor (−60V, −1A)
Medium power transistor (-60V, -1A)
|
TE Connectivity, Ltd.
ROHM[Rohm]
|
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| 2SC2411K 2SC1741S 2SC4097 |
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
Medium Power Transistor (32V, 0.5A)
Medium Power Transistor (32V 0.5A)
Medium Power Transistor (32V/ 0.5A)
|
ROHM[Rohm]
|
| 2SD214309 2SD1866TV2 |
Medium Power Transistor (Motor, Relay drive) (60隆戮10V, 2A)
Medium Power Transistor (Motor, Relay drive) (60±10V, 2A)
2000 mA, 70 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Rohm
|
| STC03DE170HV07 STC03DE170HV |
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 }
Hybrid emitter switched bipolar transistor ESBT㈢ 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT庐 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT? 1700V - 3A - 0.33 W
|
ST Microelectronics
STMicroelectronics
|
| STE07DE220 E07DE220 |
Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module
Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07з power module
Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07搂? power module
Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07 power module
|
ST Microelectronics
STMicroelectronics
|
| AA1F4Z AA1F4Z-T/JD AA1F4Z-T/JM AA1F4Z/JM |
Hybrid transistor
On-chip resistor NPN silicon epitaxial transistor For mid-speed switching
|
NEC[NEC]
NEC Corp.
|
| AA1L3N AA1L3N-T/JD AA1L3N-T/JM AA1L3N/JD AA1L3N/JM |
On-chip resistor NPN silicon epitaxial transistor For mid-speed switching
Hybrid transistor
|
NEC Corp.
NEC[NEC]
|
