| PART |
Description |
Maker |
| AD6432AST AD6432 |
GSM 3 V Transceiver IF Subsystem
|
AD[Analog Devices]
|
| LTM9001-GA LTM9001CV-GAPBF LTM9001CV-GA LTM9001IV- |
16-Bit IF/Baseband Receiver Subsystem
|
Linear Technology
|
| LTM9003IV-ABPBF LTM9003CV-AA LTM9003CV-AAPBF LTM90 |
12-Bit Digital Pre-Distortion Receiver Subsystem
|
Linear Technology
|
| Q67006-A6072 PMB2402 Q67000-A6072 PMB2402-S |
GSM RECEIVER CIRCUIT
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| RF2722PCBA-41X RF2722 |
GSM/GPRS/EDGE RECEIVER Part of the POLARISTM TOTAL RADIOTM Solution
|
RFMD[RF Micro Devices]
|
| LTM9001-AX10 LTM9001IV-AAPBF LTM9001IV-ADPBF LINEA |
16-Bit IF/Baseband Receiver Subsystem; Package: LGA; No of Pins: 81; Temperature Range: -40°C to 85°C SPECIALTY ANALOG CIRCUIT, PBGA81
LTM9001-AD - 16-Bit IF/Baseband Receiver Subsystem; Package: LGA; No of Pins: 81; Temperature Range: -400°C to 85°C SPECIALTY ANALOG CIRCUIT, PBGA81
|
Linear Technology, Corp.
LINEAR TECHNOLOGY CORP
|
| MRF18085ALSR3 MRF18085AR3 MRF18085A |
GSM/GSM EDGE, 1.8-1.88 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| MRF18030A |
MRF18030AR3, MRF18030ASR3 GSM/GSM EDGE 1.8 - 1.88 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| MRF18085B |
MRF18085B, MRF18085BR3, MRF18085BLSR3 GSM/GSM EDGE 1.9-1.99 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| AD607 AD607ARS |
Low Power Mixer/AGC/RSSI 3 V Receiver IF Subsystem(低功耗混合器/AGC/RSSI 3V接收器IF子系
|
Analog Devices, Inc.
|
