| PART |
Description |
Maker |
| TA20401201DH TA20401203DH POWEREXINC-C430F TC20172 |
1884 A, SCR
4396 A, SCR
2198 A, SCR
471 A, SCR
549.5 A, SCR
78.5 A, 200 V, SCR
1570 A, SCR
196.25 A, SCR
1256 A, SCR
863.5 A, SCR
235.5 A, SCR
392.5 A, SCR
1413 A, SCR
125.6 A, 500 V, SCR
1177.5 A, SCR
|
POWEREX INC
|
| 03P2J 03P4J 03P5J |
ALL DIFFUSED TYPE SCR POWER MINI MOLD
|
NEC Corp.
NEC[NEC]
|
| N275CH04 N275CH04LOO N275CH04KOO N275CH04HOO N275C |
769.3 A, 400 V, SCR, TO-200AB
5565.65 A, 400 V, SCR
1640.65 A, 600 V, SCR, TO-200AC
36.11 A, 1200 V, SCR, TO-48
2614.05 A, 1400 V, SCR
3799.4 A, 3400 V, SCR
2610.91 A, 2600 V, SCR
133.45 A, 800 V, SCR
4474.5 A, 4200 V, SCR
3925 A, 4500 V, SCR
3925 A, 4400 V, SCR
2692.55 A, 1600 V, SCR
70.65 A, 200 V, SCR, TO-65
3595.3 A, 400 V, SCR
3595.3 A, 200 V, SCR
4003.5 A, 2800 V, SCR
1428.7 A, 1800 V, SCR, TO-200AC
1428.7 A, 1600 V, SCR, TO-200AC
612.3 A, 1600 V, SCR
32.97 A, 1000 V, SCR, TO-48
98.91 A, 1000 V, SCR, TO-65
|
Westcode Semiconductors, Ltd.
WESTCODE SEMICONDUCTORS LTD
|
| CR02AM-4 CR02AM CR02AM-6 CR02AM-8 |
0.47 A, 200 V, SCR, TO-92
0.47 A, 300 V, SCR, TO-92
LOW POWER USE PLANAR PASSIVATION TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| R216CH12FKO R216CH12CJO R216CH12CHO R325CH02CJO R3 |
879.2 A, 1200 V, SCR, TO-200AB
1852.6 A, 200 V, SCR
1891.85 A, 1800 V, SCR
1271.7 A, 200 V, SCR, TO-200AC
1271.7 A, 400 V, SCR, TO-200AC
1271.7 A, 600 V, SCR, TO-200AC
1271.7 A, 1000 V, SCR, TO-200AC
1271.7 A, 800 V, SCR, TO-200AC
1998.61 A, 1200 V, SCR
|
Westcode Semiconductors, Ltd.
WESTCODE SEMICONDUCTORS LTD
|
| 3NH41 |
SILICON DIFFUSED TYPE (SWITCHING TYPE POWER SUPLY APPLICATIONS)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| DT18F08KDL-A DT18F08KSB-A DT18F08KDB-A DT18F08KEL- |
40 A, 800 V, SCR MODULE-5
100 A, 800 V, SCR
120 A, 1100 V, SCR
120 A, 1200 V, SCR
120 A, 1300 V, SCR
120 A, 1000 V, SCR
|
|
| TGF148-600B TGF148-1200B TGF148-800B TGF148-1000B |
63 A, 600 V, SCR, TO-65
63 A, 1200 V, SCR, TO-65
63 A, 800 V, SCR, TO-65
63 A, 1000 V, SCR, TO-65
|
ST Microelectronics
|
| ST2100C..RSERIES ST2100C42R3L ST2100C30R0 ST2100C3 |
3850 A, 3400 V, SCR
3850 A, 3000 V, SCR
3850 A, 3800 V, SCR
3850 A, 4000 V, SCR
4000V 1770A Phase Control SCR in a A-36 (R-Puk) package
3600V 1770A Phase Control SCR in a A-36 (R-Puk) package
3800V 1770A Phase Control SCR in a A-36 (R-Puk) package
3000V 1770A Phase Control SCR in a A-36 (R-Puk) package
3200V 1770A Phase Control SCR in a A-36 (R-Puk) package
4200V 1770A Phase Control SCR in a A-36 (R-Puk) package
PHASE CONTROL THYRISTORS
DIODE ZENER DUAL COMMON-ANODE 300mW 36Vz 5mA-Izt 0.05 0.1uA-Ir 27 SOT-23 3K/REEL 相位控制晶闸
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| 0R8GU41 |
RECTIFIER SILICON DIFFUSED TYPE HIGH SPEED RECTIFIER APPLICATIONS
TOSHIBA RECTIFIER SILICON DIFFUSED TYPE
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| 2Z20 2Z22 2Z24 2Z27 2Z27A 2Z51 2Z12 2Z13 2Z15 2Z16 |
TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE
ZENER DIODE SILICON DIFFUSED TYPE CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
|
