| PART |
Description |
Maker |
| 2SD5041 |
Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A.
Transistors
|
Usha India Ltd.
|
| CM150DUS-12F |
IGBT Module; Continuous Collector Current, Ic:150A; Collector Emitter Saturation Voltage, Vce(sat):2V; Power Dissipation, Pd:520W; Collector Emitter Voltage, Vceo:600V 150 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc.
|
| 2SB1537 |
Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC.
|
TY Semiconductor Co., Ltd
|
| C2611 |
Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
|
TY Semiconductor Co., Ltd
|
| SMBTA1407 |
NPN Silicon Darlington Transistor High collector current Low collector-emitter saturation voltage
|
http://
|
| BSP60 BSP62 Q62702-P1166 Q62702-P1168 BSP60BSP62 B |
From old datasheet system
PNP Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| MC68HCL05C8 MC68HSC05C8 68HC705C8 MC68HC05C8 MC68H |
TRANSISTOR,IGBT,N-CHAN,1.2kV V(BR)CES,25A I(C),TO-264AA
IGBT; Continuous Collector Current, Ic:60A; Collector Emitter Saturation Voltage, Vce(sat):24V; Power Dissipation, Pd:200W; Collector Emitter Voltage, Vceo:900V; Transistor Polarity:N Channel
PROGRAMMING REFRERENCE GUIDE 编程REFRERENCE指南
|
Motorola, Inc.
Motorola Inc
Motorola Mobility Holdings, Inc.
|
| 2PB709AW 2PB709AQW 2PB709ASW 2PB709ARW |
High collector current (max. 100 mA). Low collector-emitter saturation voltage (max. 500 mV).
|
TY Semiconductor Co., Ltd
|
| 2SB806 |
High collector to emitter voltage: VCEO?120V. Collector-base voltage VCBO -120 V
|
TY Semiconductor Co., Ltd
|
| 93C56 93C56AEP 93C56AESN 93C56BESN 93C56BEP |
2K 5.0V Automotive Temperature Microwire Serial EEPROM
2K 5.0V Automotive Temperature Microwire Serial EEPROM
Dissipation, Pd:22.2W; Package/Case:MiniDIP; C-E Breakdown Voltage:600V
IGBT Module; Continuous Collector Current, Ic:5A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:16.7W; C-E Breakdown Voltage:600V; Collector Current:5A; Collector Emitter Voltage, Vceo:600V RoHS Compliant: No
|
Microchip Technology Inc.
|
| BC327-16 BC327-25 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage)
|
Siemens Semiconductor G...
|
| X4165S8 X4163 X4165V8I-2.7A X4165V8-2.7A X4163S8-4 |
CPU Supervisor with 16K EEPROM 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8
IGBT Module; Continuous Collector Current, Ic:75A; Collector Emitter Saturation Voltage, Vce(sat):3V; Collector Emitter Voltage, Vceo:1200V; Leaded Process Compatible:Yes; Package/Case:D61; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
CPU Supervisor with 16K EEPROM
|
Intersil, Corp.
http://
Intersil Corporation
|
